A Comprehensive Review of FinFet Technology: Advantages, Challenges and Applications

Year : 2024 | Volume : 11 | Issue : 03 | Page : 1 12
    By

    Joel Joseph,

  • Shiv Prajapati,

  • Parul Panchal,

  1. Student, Department of Electronics Engineering, Birla Vishwakarma Mahavidyalaya, Vidyanagar, Anand, Gujarat, India
  2. Student, Department of Electronics Engineering, Birla Vishwakarma Mahavidyalaya, Vidyanagar, Anand, Gujarat, India
  3. Assistant Professor, Department of Electronics Engineering, Birla Vishwakarma Mahavidyalaya, Vidyanagar, Anand, Gujarat, India

Abstract

This has been complemented by improvements on the new layers that have surpassed the manufactures planar transistor by the new FinFET (Fin Field-Effect Transistor), which enhance modern demands on high performance, small size and low power consumption. This review is for a timely information on the latest development on FinFET technology, such as by curbing leakage currents by 50 percent and enhancing its speed by 30 percent proving that FinFETs are indispensable for integrated circuits at 7nm and below. The review also reviews how FinFETs can lower the dynamic power consumption by about 40% using lower supply voltages, so as to cater for both performance and low power portable applications. Furthermore, it discusses the effects of the fabrication materials such as high-k dielectric and silicon-germanium (SiGe) on the device characteristics and stability. The review ends with FinFET’s use in processors and the Internet of Things, the future consideration of EUV lithography, and advanced engineering. Further improvement in semiconductor design is another aspect of 3D FinFET technology: The GAA Transistors are integrated into modern designs as they allow superior electrostatic control and further reductions of leakage currents at sub 5nm nodes. III-V compounds and two-dimensional materials have enlarged the application sphere of FinFET and have contributed to new segments like artificial intelligence, quantum computation, and self-running systems. Furthermore, progress has been made in thermal management and modularity, for applications such as high-performance computing and energy-constrained consumer devices. As manufacturing processes strive to meet sustainability goals in their solutions, FinFET technology defines strategies for power and performance. From the foregoing discussions in this paper, it is evident and clear that FinFET is strategically positioned to drive the nanoelectronics technology forward and open up new possibilities on a variety of applications to help solve miniaturization and material integration problems

Keywords: FinFET, power consumption, semiconductor materials, integrated circuits, transistor scaling, fabrication technology

[This article belongs to Journal of Semiconductor Devices and Circuits ]

How to cite this article:
Joel Joseph, Shiv Prajapati, Parul Panchal. A Comprehensive Review of FinFet Technology: Advantages, Challenges and Applications. Journal of Semiconductor Devices and Circuits. 2024; 11(03):1-12.
How to cite this URL:
Joel Joseph, Shiv Prajapati, Parul Panchal. A Comprehensive Review of FinFet Technology: Advantages, Challenges and Applications. Journal of Semiconductor Devices and Circuits. 2024; 11(03):1-12. Available from: https://journals.stmjournals.com/josdc/article=2024/view=185808


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References

  1. Yang, Y. (2024). Applications and technological evolution of FinFET in modern technology. Theoretical and Natural Science, 31(1), 324–328. https://doi.org/10.54254/2753–8818/31/20241045
  2. Rashied, S., & Dhillon, H. S. (2023). Design and Performance Analysis of Logic Circuits using FinFET International Journal of Innovative Research in Engineering & Management, 10(6), 16–30. https://doi.org/10.55524/ijirem.2023.10.6.3
  3. Gulshan, M. B. S., Singh, R., Sodhi, J. S., & Sawhney, J. S. (2019, June 1). Advanced VLSI Technology: FinFET https://www.jetir.org/view?paper=JETIRCO06014
  4. Maurya, R. K., & Bhowmick, B. (2021). Review of FinFET Devices and Perspective on Circuit Design Silicon, 14(11), 5783–5791. https://doi.org/10.1007/s12633-021-01366-z
  5. Modeling of FinFET Self-Heating Effects in multiple FinFET Technology Generations with implication for Transistor and Product (2018, June 1). IEEE Conference Publication | IEEE Xplore. https://ieeexplore.ieee.org/document/8510657
  6. IJAR – Indian Journal of Applied Research(IJAR) ,IJAR|World Wide Journals. (n.d.). https://www.worldwidejournals.com//indian-journal-of-applied-research-(IJAR). https://www.worldwidejournals.com/indian-journal-of-applied-research- (IJAR)/special_issues_pdf/January_2015_1422602789 67
  7. R. Prakash Rao “Comparative Study Of Finfet With Mosfet And Cmosfet” International Journal of Management, Technology And Engineering Volume 8, Issue X, OCTOBER/2018 ISSN NO : 2249–7455
  8. 5nm FinFET Standard Cell Library Optimization and Circuit Synthesis in Near-and Super-Threshold Voltage Regimes. (2014, July 1). IEEE Conference Publication | IEEE Xplore. https://ieeexplore.ieee.org/document/6903401
  9. Mahmoud, M. M., & Soin, N. (2019). A comparative study of lifetime reliability of planar MOSFET and FinFET due to BTI for the 16 nm CMOS technology node based on reaction-diffusion model. Microelectronics Reliability, 97, 53–65. https://doi.org/10.1016/j.microrel.2019.03.007
  10. Reliability Challenges with Self-Heating and Aging in FinFET Technology. (2019, July 1). IEEE Conference Publication | IEEE https://ieeexplore.ieee.org/document/8854405
  11. Ensan, S. S., Moaiyeri, M. H., Ebrahimi, B., Hessabi, S., & Afzali-Kusha, A. (2019). A low-leakage and high-writable SRAM cell with back-gate biasing in FinFET technology. Journal of Computational Electronics, 18(2), 519–526. https://doi.org/10.1007/s10825-019-01327-1
  12. Chen-Wei Lin, Mango C.-T. Chao, and Chih-Chieh Hsu. Investigation of Gate Oxide Short in FinFETs and the Test Methods for FinFET SRAMs. https://www.researchgate.net/publication/261206990_Investigation_of_gate_oxide_short_in_FinF ETs_and_the_test_methods_for_FinFET_SRAMs
  13. Darsen D. Lu; Chung-Hsun Lin; Shijing Yao; Weize Xiong; Florian Bauer; Cloves R. Cleavelin. Design of FinFET SRAM Cells Using a Statistical Compact Model. https://ieeexplore.ieee.org/document/5290234
Regular Issue Subscription Review Article
Volume 11
Issue 03
Received 04/10/2024
Accepted 10/10/2024
Published 20/10/2024
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