Anup Sanjay Dighe,
Om Bhaskar Darade,
Sahil Shashikant Godase,
Vijaysinh Prakash Gaikwad,
Vaibhav Godase,
- UG Student, Student, Department of Electronics and Telecommunication Engineering, SKN Sinhgad College of Engineering, Pandharpur, Maharashtra, India
- UG Student, Student, Department of Electronics and Telecommunication Engineering, SKN Sinhgad College of Engineering, Pandharpur, Maharashtra, India
- UG Student, Student, Department of Electronics and Telecommunication Engineering, SKN Sinhgad College of Engineering, Pandharpur, Maharashtra, India
- UG Student, Student, Department of Electronics and Telecommunication Engineering, SKN Sinhgad College of Engineering, Pandharpur, Maharashtra, India
- Assistant Professor, Department of Electronics and Telecommunication Engineering, SKN Sinhgad College of Engineering, Pandharpur, Maharashtra, India
Abstract
The continuous scaling of conventional silicon-based metal-oxide-semiconductor field-effect transistors (MOSFETs) has created increasing challenges related to short-channel effects, leakage current, electrostatic control, power consumption, and variability. Two-dimensional (2D) materials have emerged as promising channel materials for future nanoelectronics devices because of their atomically thin thickness, strong electrostatic controllability, and van der Waals interfaces provide opportunities for aggressive device scaling. Graphene, transition-metal dichalcogenides (TMDs), black phosphorus, hexagonal boron nitride, and related 2D materials have consequently attracted significant interest in transistors, sensors, memory devices, photonic systems, and flexible electronics. This paper presents a comprehensive analysis of graphene- and 2D-material-based transistor technologies, emphasizing device physics, analytical modeling, electrical characteristics, contact engineering, dielectric engineering, scaling behavior, and circuit-level implications. The characteristics of graphene, MoS₂, WS₂, WSe₂, MoSe₂, black phosphorus, and other emerging 2D materials are compared. Mathematical models for drain current, transconductance, subthreshold swing, threshold voltage, on/off current ratio, carrier mobility, contact resistance, and power-delay behavior are discussed. Particular attention is given to the fundamental distinction between graphene, which is gapless in its ideal form, and semiconducting 2D materials that provide finite bandgaps suitable for switching applications. The analysis shows that the major advantages of 2D transistors arise from their ultrathin channels and excellent electrostatic gate control, whereas contact resistance, defects, dielectric interfaces, material synthesis, variability, thermal management, and large-area integration remain important challenges. Recent developments indicate that heterostructures, van der Waals contacts, high-k dielectrics, three-dimensional integration, and scalable chemical-vapor-deposition growth are promising approaches for improving device performance. The paper concludes with future directions involving compact modeling, machine-learning-assisted device optimization, heterogeneous integration, low-power computing, neuromorphic electronics, and energy-efficient edge hardware.
Keywords: Graphene, Two-Dimensional Materials, Nanoelectronics, Transistor Modeling, Device Physics
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Journal of Microelectronics and Solid State Devices
| Volume | 13 | |
| 02 | ||
| Received | 22/09/2026 | |
| Accepted | 23/09/2026 | |
| Published | 28/09/2026 | |
| Publication Time | 6 Days |