Journal of Microelectronics and Solid State Devices

The increasing switching frequency of modern solid-state semiconductor devices has intensified the influence of parasitic inductance, parasitic capacitance, temperature-dependent conduction losses, and transient voltage and current stresses. Conventional.

The continuous scaling of conventional silicon-based metal-oxide-semiconductor field-effect transistors (MOSFETs) has created increasing challenges related to short-channel effects, leakage current, electrostatic control, power consumption, and variability.

This research survey synthesizes seven supplied research papers covering interconnected applications of Internet of Things (IoT), renewable-energy-powered sensing, battery management, smart agriculture, battery thermal management, and intelligent environmental monitoring.

The increasing demand for energy-efficient and intelligent electrical appliances has created a need for automated systems that can regulate their operation according to changing environmental conditions.

With the ongoing scaling down of semiconductor devices, there is an increasing need for accurate mathematical models of electrostatic control, carrier transport, leakage current, and power consumption at the nanometer scale.

CMOS scaling faces challenges such as leakage, power dissipation, and short channel effects. Multi-Valued Logic (MVL) offers higher information density and reduced interconnections.