This is an unedited manuscript accepted for publication and provided as an Article in Press for early access at the author’s request. The article will undergo copyediting, typesetting, and galley proof review before final publication. Please be aware that errors may be identified during production that could affect the content. All legal disclaimers of the journal apply.
Heena T. Shaikh,
IR. Dr. Kazi Kutubuddin Sayyad Liyakat,
- Asst. Professor, Department of Electronics and Telecommunication Engineering, Brahmdevdada Mane Institute of Technology, Solapur, Maharashtra, India
- Professor and Head, Department of Electronics and Telecommunication Engineering, Brahmdevdada Mane Institute of Technology, Solapur, Maharashtra, India
Abstract
In the past two decades the MOSFET has transformed from a simple switch in digital logic to an analog powerhouse that can be cofabricated with the sensing material on a single chip. MetalOxideSemiconductor FieldEffect Transistors (MOSFETs) have silently become the beating heart of modern sensor platforms, translating the faint whispers of physical, chemical, and biological phenomena into robust electrical signatures. This abstract surveys the latest advances that have turned the humble MOSFET from a passive switch into an active transducer, highlighting three converging trends: (i) nanoscale channel engineering that pushes the transistor’s electrostatic control to the quantumlimit, (ii) hybrid integration of functional layers (e.g., graphene, piezoelectric oxides, and biorecognition membranes) directly onto the gate stack, and (iii) ultralowpower biasing schemes that exploit subthreshold operation and thresholdvoltage modulation for energyharvesting sensor nodes. By weaving together device physics, materials science, and circuitlevel innovations, the review demonstrates how MOSFETbased sensors now achieve subppm detection limits, millisecond response times, and seamless compatibility with standard CMOS fabrication lines. The abstract concludes by proposing a unified design framework that couples gatefunctionalization chemistry with adaptive bias control, opening a pathway toward truly “smart” sensors that selfcalibrate, selfpower, and selfcommunicate within the emerging InternetofThings (IoT) ecosystem efficiently and intelligently.
Keywords: MOSFET, Sensor design, BioFET, Pressure sensor, systemonchip (SoC), FinFET
Heena T. Shaikh, IR. Dr. Kazi Kutubuddin Sayyad Liyakat. An Overview on MOSFET based Sensor Design. Journal of Microelectronics and Solid State Devices. 2026; 13(01):-.
Heena T. Shaikh, IR. Dr. Kazi Kutubuddin Sayyad Liyakat. An Overview on MOSFET based Sensor Design. Journal of Microelectronics and Solid State Devices. 2026; 13(01):-. Available from: https://journals.stmjournals.com/jomsd/article=2026/view=239609
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Journal of Microelectronics and Solid State Devices
| Volume | 13 |
| 01 | |
| Received | 24/03/2026 |
| Accepted | 27/03/2026 |
| Published | 02/04/2026 |
| Publication Time | 9 Days |
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