Ferroelectric Materials for Next-Generation Non-Volatile Memory Applications

Notice

This is an unedited manuscript accepted for publication and provided as an Article in Press for early access at the author’s request. The article will undergo copyediting, typesetting, and galley proof review before final publication. Please be aware that errors may be identified during production that could affect the content. All legal disclaimers of the journal apply.

Year : 2026 | Volume : 13 | 01 | Page :
    By

    Rahul Ghodake,

  • Vaibhav Godase,

  • Soham Modi,

  • Vishal Misal,

  1. Assistant Professor, Department of Electronics and Telecommunication Engineering, SKN Sinhgad College of Engineering, Pandharpur, Maharashtra, India
  2. Assistant Professor, Department of Electronics and Telecommunication Engineering, SKN Sinhgad College of Engineering, Pandharpur, Maharashtra, India
  3. Student, Department of Electronics and Telecommunication Engineering, SKN Sinhgad College of Engineering, Pandharpur, Maharashtra, India
  4. Student, Department of Electronics and Telecommunication Engineering, SKN Sinhgad College of Engineering, Pandharpur, Maharashtra, India

Abstract

The continuous scaling of conventional memory technologies is increasingly constrained by limitations in power consumption, speed, endurance, and integration density. As data-intensive applications such as artificial intelligence, Internet of Things, and edge computing demand fast and energy-efficient memory solutions, alternative non-volatile memory technologies have gained significant attention. Ferroelectric materials, characterized by their reversible spontaneous polarization, offer a promising pathway toward next-generation non-volatile memory due to their intrinsic non-volatility, low operating voltage, and rapid switching capability. This paper presents a comprehensive study of ferroelectric materials and their application in emerging non-volatile memory devices. The fundamental principles of ferroelectricity, including spontaneous polarization, domain switching, and polarization–electric field hysteresis behavior, are discussed to establish the physical basis for memory operation. Both conventional ferroelectric materials and recently developed hafnium oxide–based ferroelectrics are reviewed, with emphasis on their material properties, scalability, and compatibility with advanced complementary metal–oxide–semiconductor (CMOS) technology. Furthermore, the paper examines key ferroelectric memory architectures such as ferroelectric random access memory (FeRAM), ferroelectric field-effect transistors (FeFETs), and ferroelectric tunnel junctions (FTJs), highlighting their operating mechanisms, advantages, and limitations. Fabrication techniques, performance metrics including endurance and retention, and critical reliability challenges such as wake-up and fatigue effects are also addressed. Finally, recent advancements and future trends in ferroelectric memory technologies are discussed, emphasizing their potential impact on low-power electronics, neuromorphic computing, and next-generation information processing systems

Keywords: Ferroelectric materials, Non-volatile memory, FeRAM, FeFET, Hafnium oxide, Solid-state devices

How to cite this article:
Rahul Ghodake, Vaibhav Godase, Soham Modi, Vishal Misal. Ferroelectric Materials for Next-Generation Non-Volatile Memory Applications. Journal of Microelectronics and Solid State Devices. 2026; 13(01):-.
How to cite this URL:
Rahul Ghodake, Vaibhav Godase, Soham Modi, Vishal Misal. Ferroelectric Materials for Next-Generation Non-Volatile Memory Applications. Journal of Microelectronics and Solid State Devices. 2026; 13(01):-. Available from: https://journals.stmjournals.com/jomsd/article=2026/view=238964


References

  1. Jiang AQ, Zhang Y. Next-generation ferroelectric domain-wall memories: principle and architecture. NPG Asia Materials. 2019 Dec;11(1):2.
  2. Li H, Wang R, Han ST, Zhou Y. Ferroelectric polymers for non‐volatile memory devices: a review. Polymer International. 2020 Jun;69(6):533-44.
  3. Mariammal K, Arunadevi R, Lurdhumary J, Ramya R, Vinotheni MS, DR S. IOT Based Smart Home Automation Using ESP32. In2025 International Conference on Computing and Communication Technologies (ICCCT) 2025 Apr 16 (pp. 1-5). IEEE.
  4. Bez R, Pirovano A. Overview of non-volatile memory technology: markets, technologies and trends. InAdvances in Non-volatile Memory and Storage Technology 2014 Jan 1 (pp. 1-24). Woodhead Publishing.
  5. Zambrano R. Applications and issues for ferroelectric NVMs. Materials Science in Semiconductor Processing. 2002 Apr 1;5(2-3):305-10.
  6. Gerardin S, Paccagnella A. Present and future non-volatile memories for space. IEEE Transactions on nuclear science. 2010 Dec 13;57(6):3016-39.
  7. Jan A, Kelly DM, Di Martino G. Shining light on devices: New perspectives in non-volatile memory device and material investigation. APL Electronic Devices. 2025 Jun 1;1(2).
  8. Liu SY, Chua L, Tan KC, Valavan SE. Novel ferroelectric capacitor for non-volatile memory storage and biomedical tactile sensor applications. Thin Solid Films. 2010 Oct 1;518(24):e152-5.
  9. Tarkov M, Tikhonenko F, Popov V, Antonov V, Miakonkikh A, Rudenko K. Ferroelectric devices for content-addressable memory. Nanomaterials. 2022 Dec 19;12(24):4488.
  10. Chakraborty R, Pal N, Pandey U, Pramanik S, Paliwal S, Suman S, Gupta A, Singh AK, Swaminathan P, Roy PK, Pal BN. Fabrication of non-volatile memory transistor by charge compensation of interfacial ionic polarization of a ferroelectric gate dielectric. Applied Materials Today. 2023 Aug 1;33:101862.
  11. Wong H, Li W, Zhang J, Bao W, Wu L, Liu J. Driving for More Moore on Computing Devices with Advanced Non-Volatile Memory Technology. Electronics. 2025 Aug 29;14(17):3456.
  12. Meena JS, Sze SM, Chand U, Tseng TY. Overview of emerging nonvolatile memory technologies. Nanoscale research letters. 2014 Sep 25;9(1):526.
  13. Boopathy EV, Kumar DS, George AS. Advancements in Next-Generation Memory Technologies: Challenges and Applications. Interdisciplinary Approaches to AI, Internet of Everything, and Machine Learning. 2025:25-48.
  14. Shukla N, Ni K, Stevenson S, Narayanan V. Ferroelectric Memory Technology for Big Data Applications. ACM Transactions on Embedded Computing Systems. 2025 Oct 10;24(6):1-20.
  15. Shao MH, Zhao RT, Liu H, Xu WJ, Guo YD, Huang DP, Yang YZ, Li XR, Shao W, Shen PH, Liu J. Challenges and recent advances in HfO2-based ferroelectric films for non-volatile memory applications. Chip. 2024 Sep 1;3(3):100101.
  16. Hu Y, Rabelo M, Kim T, Cho J, Choi J, Fan X, Yi J. Ferroelectricity based memory devices: new-generation of materials and applications. Transactions on Electrical and Electronic Materials. 2023 Aug;24(4):271-8.
  17. Hong S, Auciello O, Wouters D, editors. Emerging non-volatile memories. Springer; 2014 Nov 18.
  18. Khosla R, Sharma SK. Integration of ferroelectric materials: an ultimate solution for next- generation computing and storage devices. ACS applied electronic materials. 2021 Jun 30;3(7):2862-97.
  19. Han ST, Zhou Y, Roy VA. Towards the development of flexible non‐volatile memories. Advanced Materials. 2013 Oct 11;25(38):5425-49.
  20. Godase V. Design and Implementation of a Real-Time Feeder Monitoring System for Smart Substations. International Journal of Advanced Research in Science, Communication and Technology. 2025 Jan 1.
  21. Godase VV. Education as Empowerment: The Key to Women&Socio Economic Development. Available at SSRN 5536520. 2025 May 20.
  22. Godase, V. (n.d.). COMPREHENSIVE REVIEW ON EXPLAINABLE AI TO ADDRESSES THE BLACK BOX CHALLENGE AND ITS ROLE IN TRUSTWORTHY SYSTEMS. In Sinhgad College of Engineering, Artificial Intelligence Education and Innovation (pp. 127–132).
  23. Bez R, Pirovano A. Non-volatile memory technologies: emerging concepts and new materials. Materials Science in Semiconductor Processing. 2004 Jan 1;7(4-6):349-55.
  24. Faizan M, Qian Z, Zhu H, Fan S, Abas N, Rauf S, Khan GA, Huzaibi HU. Emerging Ferroelectric Materials for High-Performance Next-Generation Memory Devices. ACS Applied Electronic Materials. 2025 Aug 18;7(16):7473-502.
Ahead of Print Subscription Review Article
Volume 13
01
Received 17/12/2025
Accepted 27/01/2026
Published 20/03/2026
Publication Time 93 Days
66

Login


My IP

PlumX Metrics