High Frequency Design Approach and Feasibility Study of HBT Based W-band (90.0 GHz-100.0 GHz) Amplifier using 130 nm SiGe Based BiCMOS Technology

Open Access

Year : 2022 | Volume : | Issue : 2 | Page : 1-7
By

    Shib Shankar Singh

  1. M. Madhav Kumar

  2. Divya Kumar Garg

  1. Manager, Gallium Arsenide Enabling Technology Centre (GAETEC), Hyderabad, Telangana, India
  2. Scientist-F, Advance Numerical Research and Analysis Group (ANURAG), Hyderabad, Telangana, India
  3. Scientist-E, Advance Numerical Research and Analysis Group (ANURAG), Hyderabad, Telangana, India

Abstract

This paper present high frequency design approach and feasibility study of HBT (Hetero Junction Bipolar Transistor) based two-stage cascode amplifiers at W-band (90.0 GHz-100.0 GHz). The proposed amplifier has design using 130 nm SiGe based BiCMOS technology. This paper used low cost technology for designing of w-band amplifier and this is novelty of this paper. The schematic design and feasibility study has been carried out using Cadence software. The selection of active device, input and output matching and impacts of passive components have been analyzed for designing of amplifier at W-band frequency range. The schematic designed two-stage amplifier achieved +18.794±2.0 dB of small signal gain, better than – 15 dB of input return loss and better than-8.0dB of output return loss in simulation. This amplifier achieved +5.93 dBm of linear output power (+1 dB compression output power (P1 dB)) and +8.14 dBm of saturated output power in simulation at 95 GHz. This amplifier achieved less than +7% of %THD (Total Harmonic distortion). This schematic design amplifier includes the effect of all pads and bond wires of both stages of amplifier. The total current consumption of two-stage amplifier has only 30.0 mA with supply voltage of 3.3 volt.

Keywords: W-band, Cascode, BiCMOS, SiGe, HBT, Amplifier

[This article belongs to International Journal of Digital Communication and Analog Signals(ijdcas)]

How to cite this article: Shib Shankar Singh, M. Madhav Kumar, Divya Kumar Garg High Frequency Design Approach and Feasibility Study of HBT Based W-band (90.0 GHz-100.0 GHz) Amplifier using 130 nm SiGe Based BiCMOS Technology ijdcas 2022; 7:1-7
How to cite this URL: Shib Shankar Singh, M. Madhav Kumar, Divya Kumar Garg High Frequency Design Approach and Feasibility Study of HBT Based W-band (90.0 GHz-100.0 GHz) Amplifier using 130 nm SiGe Based BiCMOS Technology ijdcas 2022 {cited 2022 Mar 25};7:1-7. Available from: https://journals.stmjournals.com/ijdcas/article=2022/view=90646

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Regular Issue Open Access Article
Volume 7
Issue 2
Received March 10, 2022
Accepted March 22, 2022
Published March 25, 2022