A High Frequency and Power Efficient Memristor Emulator and Its Application

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Notice

nThis is an unedited manuscript accepted for publication and provided as an Article in Press for early access at the author’s request. The article will undergo copyediting, typesetting, and galley proof review before final publication. Please be aware that errors may be identified during production that could affect the content. All legal disclaimers of the journal apply.n

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Year : 2025 [if 2224 equals=””]14/10/2025 at 5:15 PM[/if 2224] | [if 1553 equals=””] Volume : 03 [else] Volume : 3[/if 1553] | [if 424 equals=”Regular Issue”]Issue : [/if 424][if 424 equals=”Special Issue”]Special Issue[/if 424] [if 424 equals=”Conference”][/if 424] 02 | Page :

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    Sudhir Singh, Manoj Josh, Rahul Kumar Gupta, Stuti Sachan, suman Chaudhary,

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  1. Student, Assistant Professor, Assistant Professor, Student, Student, Department of Electronics and Communication Engineering, JSS Academy of Technical Education, Department of Electronics and Communication Engineering, JSS Academy of Technical Education, Noida, Department of Electronics and Communication Engineering, JSS Academy of Technical Education, Noida,, Department of Electronics and Communication Engineering, JSS Academy of Technical Education, Noida,, Department of Electronics and Communication Engineering, JSS Academy of Technical Education, Noida, Uttar Pradesh, Uttar Pradesh, Uttar Pradesh, Uttar Pradesh, Uttar Pradesh, India, India, India, India, India

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Abstract

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nThis study presents a small, energy-efficient memristor emulator made for use at high frequencies. The proposed circuit has a simple design that only includes three n-type MOSFETs and a grounded capacitor. This means that there is no need for active components or DC biasing. This streamlined architecture not only makes things easier, but it also uses very little power, with dynamic and static power measured at 15.82 μW and 65.6 μW, respectively. The design copies the most important memristive behaviour, especially the pinched hysteresis loop in the current-voltage relationship, even at frequencies up to 100 MHz. The emulator was made with 90 nm CMOS technology and works well across a wide range of frequencies. The emulator not only has a small size and low power use, but it also works well in a wide range of operating conditions. Its ability to keep the pinched hysteresis loop that memristive systems have, even at high frequencies, shows how reliable and faithful it is. This design is especially good for use in high-speed neuromorphic computing systems, signal processing circuits, and non-volatile memory applications. Using only three nMOS transistors and a grounded capacitor makes it easier to make and more scalable. Overall, the suggested emulator is a useful and effective way to solve problems with high-frequency analog computing platforms.nn

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Keywords: Memristor emulator, energy-efficient circuit, high-frequency operation, MOSFET-only design, pinched hysteresis behavior, grounded capacitor, neuromorphic computing, in-memory processing, SRAM integration

n[if 424 equals=”Regular Issue”][This article belongs to International Journal of Electrical and Communication Engineering Technology ]

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How to cite this article:
nSudhir Singh, Manoj Josh, Rahul Kumar Gupta, Stuti Sachan, suman Chaudhary. [if 2584 equals=”][226 wpautop=0 striphtml=1][else]A High Frequency and Power Efficient Memristor Emulator and Its Application[/if 2584]. International Journal of Electrical and Communication Engineering Technology. 14/10/2025; 03(02):-.

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nSudhir Singh, Manoj Josh, Rahul Kumar Gupta, Stuti Sachan, suman Chaudhary. [if 2584 equals=”][226 striphtml=1][else]A High Frequency and Power Efficient Memristor Emulator and Its Application[/if 2584]. International Journal of Electrical and Communication Engineering Technology. 14/10/2025; 03(02):-. Available from: https://journals.stmjournals.com/ijecet/article=14/10/2025/view=0

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Volume 03
[if 424 equals=”Regular Issue”]Issue[/if 424][if 424 equals=”Special Issue”]Special Issue[/if 424] [if 424 equals=”Conference”][/if 424] 02
Received 05/07/2025
Accepted 08/09/2025
Published 14/10/2025
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Publication Time 101 Days

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