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Special Issue
Topic

A Review of the usage of Bipolar Transistors devices

Guest Editor:

        • Abstract Submission Deadline : 30/11/2023

        Manuscript Submission Deadline : 25/12/2023

        [This article belongs to Special Issue A Review of the usage of Bipolar Transistors devices under section jomsd, jomsd in (jomsd, jomsd)]

        Special Issue Description

        A bipolar junction transistor (BJT) is a type of transistor in which electrons and electron holes are used as charge carriers. A unipolar transistor, such as a field-effect transistor, on the other hand, uses only one type of charge carrier. A bipolar transistor uses a small current injected at one of its terminals to control a much larger current flowing between the terminals, allowing the device to amplify or switch. BJTs make use of two junctions between two types of semiconductors, n-type and p-type, which are regions in a single crystal of material. The junctions can be formed in a variety of ways, including changing the doping of the semiconductor material as it grows, depositing metal pellets to form alloy junctions and diffusion of n-type and p-type doping substances into the crystal. Junction transistors quickly surpassed the original point-contact transistor in predictability and performance. Diffused transistors, along with other components, are components of analog and digital integrated circuits. Hundreds of bipolar junction transistors can be manufactured at a low cost in a single circuit. Because of the wide variety of BJT types available, as well as its high transconductance and output resistance compared to MOSFETs, the BJT continues to excel in some applications, such as discrete circuit design. Bipolar transistor integrated circuits were the primary active devices in a generation of mainframe and minicomputers, but most computer systems now use field-effect transistor integrated circuits. Bipolar transistors are still used in signal amplification, switching, and digital circuits.

        Editor Keywords

        Compound semiconductor, Equivalent circuit of electron devices, Current gain, Photocurrent gain and Transition metal dichalcogenides

        Manuscript Submission information

        Manuscripts should be submitted online by registering and logging in to this link. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed.
        Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent on email address:[email protected] for announcement on this website.

        Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page.

        Participating journals:

        Journal Name

        Journal of Microelectronics and Solid State Devices, Journal of Microelectronics and Solid State Devices

        Abbrivation

        jomsd, jomsd

        ISSN

        2455-3336, 2455-3336

        Since

        2014

        APC

        950  $