B. Goswami,
- Assistant Professor, Metallurgical Engineering, RVS College of Engineering and Technology, Jamshedpur, India
Abstract
This review explores the Hall and Nernst-Ettingshausen effects in various magnetic systems, including diluted magnetic semiconductors (DMS), topological insulators, superconductors, and novel composite materials. In DMS, the interplay of ferromagnetism and magnetic impurities introduces unique transport behaviors, particularly influencing the anomalous Hall effect (AHE) and thermomagnetic phenomena. We also examine the Nernst-Ettingshausen effect (NE) in topological insulators and
superconductors, revealing the influence of band topology and vortex-like excitations. Special attention is given to the thermoelectric properties of graphene and its potential for tuning electronic transport via gate voltage. Furthermore, we delve into recent advancements in cryogenic applications utilizing NE-based coolers and the emerging field of composite spin-Seebeck effects, demonstrating their promise for efficient thermoelectric power generation. This comprehensive review synthesizes
experimental and theoretical developments, emphasizing the significance of these effects in advancing future electronic and energy conversion technologies.
Keywords: Diluted magnetic semiconductors (DMS), graphene nanoribbons, Hall effect, Nernst Ettingshausen effect, spin-Seebeck effect, thermomagnetic effects, topological insulators
[This article belongs to Research & Reviews : Journal of Physics ]
B. Goswami. Investigation of the Hall and Nernst-Ettingshausen Effects in Diluted Magnetic Semiconductors. Research & Reviews : Journal of Physics. 2024; 13(03):1-5.
B. Goswami. Investigation of the Hall and Nernst-Ettingshausen Effects in Diluted Magnetic Semiconductors. Research & Reviews : Journal of Physics. 2024; 13(03):1-5. Available from: https://journals.stmjournals.com/rrjophy/article=2024/view=0
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Research & Reviews : Journal of Physics
| Volume | 13 |
| Issue | 03 |
| Received | 19/10/2024 |
| Accepted | 21/10/2024 |
| Published | 22/10/2024 |
| Publication Time | 3 Days |
async function fetchCitationCount(doi) {
let apiUrl = `https://api.crossref.org/works/${doi}`;
try {
let response = await fetch(apiUrl);
let data = await response.json();
let citationCount = data.message[“is-referenced-by-count”];
document.getElementById(“citation-count”).innerText = `Citations: ${citationCount}`;
} catch (error) {
console.error(“Error fetching citation count:”, error);
document.getElementById(“citation-count”).innerText = “Citations: Data unavailable”;
}
}
fetchCitationCount(“10.37591/RRJoPhy.v13i03.0”);