Current Controlled Oscillator Using FinFET

Year : 2025 | Volume : 12 | Issue : 03 | Page : 17 28
    By

    Rahul Kumar Gupta,

  • Tanuj Hastiyan,

  • Vaibav Rana,

  • Sushant Singh,

  1. Assistant Professor, Department of Electronics and Communication Engineering, Delhi Technological University, Delhi, India
  2. Student, Department of Electronics and Communication Engineering, JSS Academy of Technical Education, Noida, Uttar Pradesh, India
  3. Student, Department of Electronics and Communication Engineering, JSS Academy of Technical Education, Noida, Uttar Pradesh, India
  4. Student, Department of Electronics and Communication Engineering, JSS Academy of Technical Education, Noida, Uttar Pradesh, India

Abstract

A current-controlled oscillator using 18 nm FinFET technology is proposed in this study which consists of a Current Controlled Differential Difference Current Conveyor (CCDDCC) block to control the current. FinFET technology has better scalability and lower leakage current compared to traditional CMOS, which allows it to surpass the obstacles faced by CMOS-based oscillators. The suggested oscillator is suitable for electronic applications such as Phase-Locked Loop (PLL) systems, radio frequency (RF) communication systems, and many more, due to its linear current-to-frequency output with the help of the CCDDCC block. Detailed circuit simulations were performed with an 18 FinFET technology node, and the design was assessed based on the established increase in frequency range along with decreased power consumption. Analysis proved that there is lower power usage and better frequency stability compared to conventional CMOS based devices. The implementation of FinFET with sophisticated current control methods to develop scalable oscillators reveals new possibilities for the enhancement of low powered and high-performance devices.

Keywords: FinFET technology, current-controlled oscillator, current-controlled differential difference current conveyor, low power design, high-frequency oscillator, scalable circuit design, RF communication systems, nanometer technology nodes, oscillator circuit optimization

[This article belongs to Journal of Semiconductor Devices and Circuits ]

How to cite this article:
Rahul Kumar Gupta, Tanuj Hastiyan, Vaibav Rana, Sushant Singh. Current Controlled Oscillator Using FinFET. Journal of Semiconductor Devices and Circuits. 2025; 12(03):17-28.
How to cite this URL:
Rahul Kumar Gupta, Tanuj Hastiyan, Vaibav Rana, Sushant Singh. Current Controlled Oscillator Using FinFET. Journal of Semiconductor Devices and Circuits. 2025; 12(03):17-28. Available from: https://journals.stmjournals.com/josdc/article=2025/view=227923


References

  1. Hu S, et al. A 15.6-GHz Quad-Core VCO with Extended Circular Coil Topology for Both Main and Tail Inductors in 8-nm FinFET Process. In 2023 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), San Diego, CA, USA. 2023; 201–204. doi:10.1109/RFIC54547.2023.101 86135.
  2. Reddy RV, Rapina SK, Hazra S, Sarangam K. GHz Multi-Phase Ring VCO Design with Wide Tuning Range for SerDes Applications in nm FinFET Process. In Proc 38th Int Conf on VLSI Design (VLSID’ ). 2025; 302–307. doi:10.1109/VLSID64188.2025.00065.
  3. Zographopoulos I, Plessas F, Antonopoulos EA, Foukalas F. A 16-nm FinFET 16-GHz Differential LC-VCO. In 2015 IEEE Int. Conf. on Microwaves, Communications, Antennas and Electronic Systems (COMCAS), Tel Aviv, Israel. 2015 Nov; 1–4. doi:10.1109/COMCAS.2015.7360451.
  4. Liu Y, Yang C, Liu X, Jin J. A Wideband Low Phase Noise GHz Class-F CO in nm FinFET CMOS Technology. In 2020 IEEE Asia-Pacific Microwave Conference (APMC). 2020 Dec; 1–3. doi:10.1109/APMC47863.2020.9331373.
  5. Srinivas PSTN, Pulluri VK, Kumar C, Mal AK. Implementation of 3 nm FinFET oltage Controlled Oscillator. In 2014 Int. Conf. on Convergence of Technology (I2CT), Pune, India. 2014 Apr; 45–49.
  6. Tayenjam S, Sriram SR, Bindu B. Design of FinFET Based Frequency Synthesizer. In 2015 Annual IEEE India Conference (INDICON). 2015 Dec; 1–5. doi:10.1109/INDICON.2015.7443369.
  7. Chen X, et al. Voltage-Follower Coupling Quadrature Oscillator with Embedded Phase-Interpolator in nm FinFET. In 2019 IEEE Custom Integrated Circuits Conference (CICC), Austin, TX, USA. 2019; 1–4. doi:10.1109/CICC.2019.8780309.
  8.  Lourts Deepak A, Dhulipalla L, Chaitra SK, Shaik CB. Designing of FinFET Based 5-Stage and 3-Stage Ring Oscillator High Frequency Generation in 3 nm. In IEEE-International Conference on Advances in Engineering, Science and Management (ICAESM-2012), Nagapattinam, India. 2012; 222–227.
  9. Khan AB, Cardenas J, Chen L, Khan M, Qureshi A. A Low Power and Low Noise Voltage-Controlled Oscillator in 28-nm FDSOI Technology for Wireless Communication Applications. In 2019 IEEE Canadian Conference of Electrical and Computer Engineering (CCECE), Edmonton, AB, Canada. 2019; 1–5. doi:10.1109/CCECE.2019.8861796.
  10. Singh J, et al. 14-nm FinFET Technology for Analog and RF Applications. IEEE Trans Electron Devices. 2018 Jan; 65(1): 31–37. doi:10.1109/TED.2017.2776838.
  11. Song S, et al. A 2-to- GHz Multi-Phase Clock Generator with Phase Interpolators Using Injection-Locked Oscillation Buffers for High-Speed I/Os in nm FinFET. In 2019 IEEE Custom Integrated Circuits Conference (CICC), Austin, TX, USA. 2019; 1–4. doi:10.1109/CICC.2019. 8780177.
  12. Chen S, et al. A 4-to- GHz In erter-Based Injection-Locked Quadrature Clock Generator with Phase Interpolators for Multi-Standard I/Os in nm FinFET. In 2018 IEEE Int. Solid-State Circuits Conf. (ISSCC), San Francisco, CA, USA. 2018; 390–392. doi:10.1109/ISSCC.2018.8310348.
  13. Collaert N, et al. A Functional 41-Stage Ring Oscillator Using Scaled FinFET Devices with 25-nm Gate Lengths and 10-nm Fin Widths Applicable for the 45-nm CMOS Node. IEEE Electron Device Lett. Aug; 25(8): 568–570. doi:10.1109/LED.2004.831585.
  14. Zayed AA, Issa HH, Shehata KA. FinFET Based Low Power Ring Oscillator Physical Unclonable Functions. In 2019 31st Int. Conf. on Microelectronics (ICM), Cairo, Egypt. 2019; 227–230. doi:10.1109/ICM48031.2019.9021283.
  15. Kavyashree K, Chandana DS, Bhat PRA, Sangeetha BG. Design and Analysis of Voltage Controlled Oscillators in nm CMOS Process. In 2020 2nd Int. Conf. on Innovative Mechanisms for Industry Applications (ICIMIA), Bangalore, India. 2020; 154–159. doi:10.1109/ICIMIA48430. 2020.9074893.
  16. Mehta N, et al. A MHz Self-Calibrating RC Oscillator Capable of Clock-Glitch Detection for Hardware Security in a 3 nm FinFET Process. In 2025 IEEE Int Solid-State Circuits Conf (ISSCC), San Francisco, CA, USA. 2025; 302–304. doi:10.1109/ISSCC49661.2025.10904687.
  17. Palinje M. 3 nm FinFET Based PLL. In Int. Conf. on Con ergence to Digital World – Quo Vadis (ICCDW), Mumbai, India. 2020; 1–7. doi:10.1109/ICCDW45521.2020.9318671.
  18. Ahmadi-Mehr SA-R, Tohidian M, Staszewski RB. Analysis and Design of a Multi-Core Oscillator for Ultra-Low Phase Noise. IEEE Trans Circuits Syst I: Reg Papers. 2016 Apr; 63(4): 529–539. doi:10.1109/TCSI.2016.2529218.
  19. Xia J, Wu X-A, Tian T. A 4-to- GHz Dual-Loop PLL Based on Current-Control RO and Calibration in a nm FinFET. In 2024 13th Int Conf on Communications, Circuits and Systems (ICCCAS), Xiamen, China. 2024; 195–199. doi:10.1109/ICCCAS62034.2024.10652768.
  20. Yada SK, Joshi M, Ranjan A, Sharma DK. A Current Tunable Third-Order Oscillator Using CCDDCC. In Micro-Electronics and Telecommunication 2020. Singapore: Springer; 2020; 325– 332.

Regular Issue Subscription Original Research
Volume 12
Issue 03
Received 05/07/2025
Accepted 28/07/2025
Published 26/08/2025
Publication Time 52 Days


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