Physics of Semiconductors and Electronic Circuits

Year : 2025 | Volume : 12 | Issue : 02 | Page : 9 17
    By

    V. Basil Hans,

  1. Research Professor, Professor, Department of Management & Commerce, Srinivas University in Mangalore, Karnataka, India

Abstract

This study talks about the basic ideas behind semiconductor physics and how important they are for making and running modern electronic circuits. It starts with a look at intrinsic and extrinsic semiconductors, going into how charge carriers move, energy band theory, and how doping affects how well the electricity flows. Next, the conversation turns to semiconductor devices like diodes, bipolar junction transistors (BJTs), and field-effect transistors (FETs). The focus is on how they work and how they are used in both analogue and digital circuits. We learn about device modelling, signal amplification, switching behaviour, and integrated circuit design by focusing on how the characteristics of semiconductor materials impact circuit performance. The study’s objective is to provide students, researchers, and engineers working in the field of electronics with a strong foundation by bridging the gap between semiconductor physics and practical circuit design. The study also highlights the importance of semiconductor physics in integrated circuit (IC) design, emphasizing the ways in which material qualities affect circuit performance, behaviour, power efficiency, and scaling. It seeks to close the gap between scientific knowledge and engineering practice by clearly relating theoretical physics to real-world circuit applications. Through this comprehensive approach, the study seeks to provide valuable insights for students, academic researchers, and industry professionals involved in electronics and electrical engineering. It not only reinforces the theoretical foundation needed to grasp how semiconductor devices work but also illustrates their real-world implications in modern technology. Ultimately, the goal is to foster a deeper appreciation of how the microscopic behaviour of materials governs the macroscopic functionality of advanced electronic systems. The study moves from a description of semiconductor materials to a detailed examination of common semiconductor devices, such as diodes, field-effect transistors (FETs), and bipolar junction transistors (BJTs). It describes their functional responsibilities in analogue and digital electronic circuits as well as their internal structure and working mechanisms. Along with the fundamentals of device modelling and biasing approaches, topics like signal amplification, switching behaviour, and frequency response are covered.

Keywords: CMOS, SSRS, RSMRD, Domino logic, PDN, RSDLS, DSM, BSIM4

[This article belongs to Journal of Semiconductor Devices and Circuits ]

How to cite this article:
V. Basil Hans. Physics of Semiconductors and Electronic Circuits. Journal of Semiconductor Devices and Circuits. 2025; 12(02):9-17.
How to cite this URL:
V. Basil Hans. Physics of Semiconductors and Electronic Circuits. Journal of Semiconductor Devices and Circuits. 2025; 12(02):9-17. Available from: https://journals.stmjournals.com/josdc/article=2025/view=214727


References

  1. Middlebrook RD. A modern approach to semiconductor and vacuum device theory. Proceedings of the IEE-Part B: Electronic and Communication Engineering. 1959 May; 106(17S): 887–902.
  2. Rurali R. Colloquium: Structural, electronic, and transport properties of silicon nanowires. Rev Mod Phys. 2010 Jan; 82(1): 427–49.
  3. Manley RG. Discrimination of surface and volume states in fully depleted field-effect devices on thick insulator substrates. New York: Rochester Institute of Technology; 2011.
  4. Watkins SE. An engineering physics introduction to electronics for ECE sophomores. In 2013 ASEE Annual Conference & Exposition. 2013 Jun 23; 23–162.
  5. Sun M, He X, Chen M, Tang CS, Liu X, Dai L, Liu J, Zeng Z, Sun S, Breese MB, Cai C. Tunable Collective Excitations in Epitaxial Perovskite Nickelates. ACS Photonics. 2024 May 29; 11(6): 2324–34.
  6.  Bernardi M, Ataca C, Palummo M, Grossman JC. Optical and electronic properties of two- dimensional layered materials. Nanophotonics. 2017 Mar 1; 6(2): 479–93.
  7.  Piprek J. Efficiency models for GaN-based light-emitting diodes: Status and challenges. Materials. 2020 Nov 17; 13(22): 5174.
  8.  Ghazarians A. A numerical study of the van Roosbroeck system for semiconductors. Master’s Thesis. California: San Jose State University; 2018.
  9.  Klemenschits X, Selberherr S, Filipovic L. Modeling of gate stack patterning for advanced technology nodes: A review. Micromachines. 2018 Nov 29; 9(12): 631.
  10. Jiya IN, Gouws R. Overview of power electronic switches: A summary of the past, state-of-the-art and illumination of the future. Micromachines. 2020 Dec 16; 11(12): 1116.
Regular Issue Subscription Review Article
Volume 12
Issue 02
Received 07/05/2025
Accepted 23/05/2025
Published 26/06/2025
Publication Time 50 Days
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