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J. Spandana, L. Jagadeesh Naik
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- Student, Associate professor, Department of Electronics & Communication Engineering, Holy Trinity Educational Society, Department of Electronics & Communication Engineering, Holy Trinity Educational Society, Holy Mary Institute of Technology and Science, Kondapur, Telangana, Telangana, India, India
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Abstract
nAn efficient method of modifying subthreshold voltages is proposed here. As an alternative to static power dissipation, the suggested design allows for charging of internal nodes through VDDH. The force of the pull-down mechanism may be increased by connecting a second auxiliary circuit. The transition energy for input frequencies between 1 and 5 MHz is 84 fJ, the propagation delay is 46 ns, the dynamic power dissipation is 0.3 mW, and the static power dissipation is 23 mW, according to post-layout simulations of level shifters in 16 nm CMOS technology. Silicon has a precise area of 60.6902 microsquare meters, which is an intriguing statistic.
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Keywords: CPU, power dissipation, auxiliary circuit, CMOS, logic circuits
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Browse Figures
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References
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- PRIMARY SOURCES Zahra Ghasemzadeh, Mehdi Saberi. “A LowPower Subthreshold Level Shifter in 180 nm Process”, 2021 29th Iranian Conference on Electrical Engineering (ICEE), 2021
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- Stuart N Wooters, Benton H Calhoun, Travis N Blalock. “An Energy-Efficient Subthreshold Level Converter in 130-nm CMOS”, IEEE Transactions on Circuits and Systems II: Express Briefs, 2010
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International Journal of VLSI Circuit Design & Technology
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| Volume | 01 |
| Issue | 01 |
| Received | July 4, 2023 |
| Accepted | August 14, 2023 |
| Published | September 4, 2023 |
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