Photonic-Assisted Spintronic Solid-State Switching Model for High-Speed Memory Devices

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This is an unedited manuscript accepted for publication and provided as an Article in Press for early access at the author’s request. The article will undergo copyediting, typesetting, and galley proof review before final publication. Please be aware that errors may be identified during production that could affect the content. All legal disclaimers of the journal apply.

Year : 2026 | Volume : 04 | Issue : 01 | Page :
    By

    Bibhu Prasad Ganthia,

  • Rosalin Pradhan,

  1. Assistant Professor, Department of Electrical Engineering, Indira Gandhi Institute of Technology, Sarang, Dhenkanal, Odisha, India
  2. Assistant Professor, Department of Electrical Engineering, Indira Gandhi Institute of Technology, Sarang, Dhenkanal, Odisha, India

Abstract

The rapid advancement of high-speed computing and data-centric applications has intensified the demand for energy-efficient and ultra-fast memory technologies. This paper proposes a Photonic-Assisted Spintronic Solid-State Switching Model for next-generation high-speed memory devices. The proposed framework integrates photonic excitation mechanisms with spintronic switching dynamics to enhance data transfer speed, minimize switching delay, and reduce power dissipation in solid-state memory architectures. By combining optical pulse-assisted spin polarization with magnetic tunnel junction-based switching, the model achieves improved switching stability and enhanced thermal reliability under high-frequency operational conditions. The study employs a hybrid analytical and simulation-driven approach to evaluate switching efficiency, propagation latency, spin coherence retention, and energy consumption characteristics. Experimental modelling demonstrates that the proposed photonic-assisted architecture significantly outperforms conventional CMOS-based memory switching systems in terms of access speed, energy efficiency, and scalability. Furthermore, the integration of photonic control signals reduces electromagnetic interference and improves operational accuracy for high-density memory applications. The proposed model offers promising potential for future artificial intelligence processors, neuromorphic computing systems, quantum-inspired storage architectures, and ultra-fast embedded electronic platforms requiring reliable and low-power memory operation. For next-generation nanoelectronics memory systems operating in high-speed and energy-constrained computational environments with enhanced reliability and long-term operational stability, the suggested architecture supports scalable implementation, improves switching synchronisation, and strengthens signal integrity.

Keywords: Spintronic Memory, Photonic Switching, Solid-State Devices, High-Speed Memory, Magnetic Tunnel Junction, Energy-Efficient Computing.

[This article belongs to International Journal of Solid State Innovations & Research ]

How to cite this article:
Bibhu Prasad Ganthia, Rosalin Pradhan. Photonic-Assisted Spintronic Solid-State Switching Model for High-Speed Memory Devices. International Journal of Solid State Innovations & Research. 2026; 04(01):-.
How to cite this URL:
Bibhu Prasad Ganthia, Rosalin Pradhan. Photonic-Assisted Spintronic Solid-State Switching Model for High-Speed Memory Devices. International Journal of Solid State Innovations & Research. 2026; 04(01):-. Available from: https://journals.stmjournals.com/ijssir/article=2026/view=245335


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Regular Issue Subscription Review Article
Volume 04
Issue 01
Received 23/05/2026
Accepted 26/05/2026
Published 27/05/2026
Publication Time 4 Days
5

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