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Editor Overview
josdc maintains an Editorial Board of practicing researchers from around the world, to ensure manuscripts are handled by editors who are experts in the field of study.
Prof. (Dr.) Angsuman Sarkar
Professor
Kalyani Government Engineering College, West Bengal, India 741235
Editor in Chief
Journal of Semiconductor Devices and Circuits
Email :
Institutional Profile Link : https://ww. . .
Publisher
STM Journals, An imprint of Consortium e-Learning Network Pvt. Ltd.
E-mail: [email protected]
Tel: (+91) 0120- 4781 200, (+91)120-4781-260
Mob: (+91) 981-007-8958, (+91)-966-7725-932
Focus and Scope
About the Journal
Journal of Semiconductor Devices and Circuits [2231-0401(e)] is a peer-reviewed hybrid open-access journal launched in 2014 focused on the rapid publication of fundamental research papers on all areas of Semiconductor Devices and Circuits.
Focus and Scope
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Conductors: Electrical resistance, conductance, Electrical resistivity, conductivity, Conductor ampacity, Isotropy, Superconductivity, Charge transfer complex.
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Semiconductors: Variable electrical conductivity, Heterojunctions, Excited electrons, high thermal conductivity, thermoelectric power factors, thermoelectric generators, thermoelectric coolers, Plasma etching, Doping, Amorphous semiconductors, Semiconductor characterization techniques.
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Insulator: Band gap, Electrical breakdown, electric field, charge carriers, chain reaction, electric arc, electrocution, ampacity, Sheath insulator, Suspension insulators, breakdown voltages.
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Optical Sensor: Position sensors, photographic flash, Photoelectric sensors, Photoconductive devices, Photovoltaics, Phototransistors, Optical Switches, electro-optic effect, piezoelectric systems, infrared spectroscopy.
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MOS Capacitor: Semiconductor, dielectric material, capacitor, capacitance, electronegativity. Depletion layer capacitance.
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MOSFET: Field-effect transistor (FET), CMOS logic, high-κ dielectric, threshold voltage, overdrive voltage, velocity saturation, MOS integrated circuits, CMOS circuits, Gate material, IC fabrication process.
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Energy bands: Valence Electrons, Valence Band, Conduction Electrons, Conduction Band, the forbidden energy gap.
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Electrical conduction: Solids (including insulating solids), Metals, Semiconductors, Superconductors, Electrolytes, Gases and plasmas, Vacuum.
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Charge carrier: Electric charge, electrical conductors, valence electrons, electrolytes, electric arcs, thermionic emission, Carrier generation, and recombination, Majority and minority carriers, Charge carrier density.
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Doping: Intrinsic semiconductor, extrinsic semiconductor, degenerate semiconductor, dopants, Post-growth doping, Neutron transmutation doping, Dopant elements, Silicon dopants, Chemical doping, Electrochemical doping, Magnetic doping, Modulation doping.