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Journal of Semiconductor Devices and Circuits Cover

Journal of Semiconductor Devices and Circuits

ISSN: 2455-3379

Publisher

Focus and Scope

About the Journal

Journal of Semiconductor Devices and Circuits [2231-0401(e)] is a peer-reviewed hybrid open-access journal launched in 2014 focused on the rapid publication of fundamental research papers on all areas of Semiconductor Devices and Circuits.

Focus and Scope

  • Conductors: Electrical resistance, conductance, Electrical resistivity, conductivity, Conductor ampacity, Isotropy, Superconductivity, Charge transfer complex.

  • Semiconductors: Variable electrical conductivity, Heterojunctions, Excited electrons, high thermal conductivity, thermoelectric power factors, thermoelectric generators, thermoelectric coolers, Plasma etching, Doping, Amorphous semiconductors, Semiconductor characterization techniques.

  • Insulator: Band gap, Electrical breakdown, electric field, charge carriers, chain reaction, electric arc, electrocution, ampacity, Sheath insulator, Suspension insulators, breakdown voltages.

  • Optical Sensor: Position sensors, photographic flash, Photoelectric sensors, Photoconductive devices, Photovoltaics, Phototransistors, Optical Switches, electro-optic effect, piezoelectric systems, infrared spectroscopy.

  • MOS Capacitor: Semiconductor, dielectric material, capacitor, capacitance, electronegativity. Depletion layer capacitance.

  • MOSFET: Field-effect transistor (FET), CMOS logic, high-κ dielectric, threshold voltage, overdrive voltage, velocity saturation, MOS integrated circuits, CMOS circuits, Gate material, IC fabrication process.

  • Energy bands: Valence Electrons, Valence Band, Conduction Electrons, Conduction Band, the forbidden energy gap.

  • Electrical conduction: Solids (including insulating solids), Metals, Semiconductors, Superconductors, Electrolytes, Gases and plasmas, Vacuum.

  • Charge carrier: Electric charge, electrical conductors, valence electrons, electrolytes, electric arcs, thermionic emission, Carrier generation, and recombination, Majority and minority carriers, Charge carrier density.  

  • Doping: Intrinsic semiconductor, extrinsic semiconductor, degenerate semiconductor, dopants, Post-growth doping, Neutron transmutation doping, Dopant elements, Silicon dopants, Chemical doping, Electrochemical doping, Magnetic doping, Modulation doping.