Recent Innovations in Semiconductor Materials for Smart Electronic Devices

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This is an unedited manuscript accepted for publication and provided as an Article in Press for early access at the author’s request. The article will undergo copyediting, typesetting, and galley proof review before final publication. Please be aware that errors may be identified during production that could affect the content. All legal disclaimers of the journal apply.

Year : 2026 | Volume : 13 | 02 | Page :
    By

    Mrs. Bhavisha Vishalbhai Parvadiya,

  1. Assistant Professor, Department of Computer Science and Engineering, Sardar Patel College of Administration and Management, SPEC Campus, Bakrol, India

Abstract

Recent advancements in semiconductor materials have significantly transformed the design, performance, and functionality of smart electronic devices such as smartphones, wearable systems, IoT devices, autonomous systems, and biomedical electronics. With the continuous demand for higher processing speed, lower power consumption, improved thermal stability, and extreme miniaturization, traditional silicon-based semiconductor technology is facing major limitations. As device dimensions shrink to the nanometer scale, challenges such as leakage current, heat dissipation, and quantum mechanical effects are becoming more prominent, making further scaling of silicon devices increasingly difficult and limiting the continuation of Moore’s Law. To overcome these limitations, researchers are exploring alternative semiconductor materials with superior electrical, thermal, and mechanical properties. Wide-bandgap semiconductors such as Gallium Nitride (GaN) and Silicon Carbide (SiC) are widely used in high-power, high- frequency, and high-temperature applications. In addition, two-dimensional (2D) materials such as graphene, MoS₂, and h-BN provide ultra-thin structures with excellent carrier mobility and flexibility, making them suitable for next-generation nanoelectronics and flexible devices. Organic semiconductors are also gaining importance in low-cost, lightweight, and flexible electronics. Furthermore, compound semiconductors and heterogeneous integration techniques enable the combination of multiple materials to enhance device performance. Advanced fabrication methods such as atomic layer deposition (ALD), chemical vapor deposition (CVD), and molecular beam epitaxy (MBE) allow precise control at the atomic level. This paper presents a comprehensive overview of recent innovations in semiconductor materials, their properties, applications in smart electronic devices, and future research directions focused on energy efficiency, miniaturization, and multifunctional intelligent systems.

Keywords: Semiconductor materials, GaN, SiC, graphene, 2D materials, smart devices, nanoelectronics, wide-bandgap semiconductors

How to cite this article:
Mrs. Bhavisha Vishalbhai Parvadiya. Recent Innovations in Semiconductor Materials for Smart Electronic Devices. Journal of Semiconductor Devices and Circuits. 2026; 13(02):-.
How to cite this URL:
Mrs. Bhavisha Vishalbhai Parvadiya. Recent Innovations in Semiconductor Materials for Smart Electronic Devices. Journal of Semiconductor Devices and Circuits. 2026; 13(02):-. Available from: https://journals.stmjournals.com/josdc/article=2026/view=246203


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Ahead of Print Subscription Review Article
Volume 13
02
Received 23/05/2026
Accepted 04/06/2026
Published 06/06/2026
Publication Time 14 Days
10

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