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Indranil Maity,
Arighna Bhattacharjee,
Arijit Mondal,
- Supervisor, Department of Electronics and Communication Engineering (ECE), Institute of Engineering and Management (IEM), University of Engineering & Management (UEM), Kolkata, West Bengal, India
- Student, Department of Electronics and Communication Engineering (ECE), Institute of Engineering and Management (IEM), Kolkata, West Bengal, India
- Student, Department of Electronics and Communication Engineering (ECE), Institute of Engineering and Management (IEM), Kolkata, West Bengal, India
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In the present work, a multi-junction solar cell was designed to obtain better performance over single-junction solar cells. The proposed structure is composed of different layers of diverse semiconductor materials stacked on each other. Here, an In 0.51 Ga 0.49 P/GaAs double- junction solar cell was outlined as having a distinctive composite material (GaAs) as the tunneling junction. To optimize the solar cell’s effectiveness, In 0.47 Ga 0.15 Al 0.37 P was used in the window layer and the back-surface field (BSF) layers. All the optimizations and computations were performed utilizing the Silvaco TCAD software (version: 5.26.1.R), under 1 sun (1370 W/m 2 ). The light beam of the standard AM1.5G was fired at the solar cell at 300 K, room temperature. With the help of two subcells of the dual-junction solar cell, and by fine-tuning the layer parameters (viz. materials property and material thickness), notable operational parameters were accomplished for the modelled dual-junction solar cells. Our examination centered on the photogeneration rate, energy band diagrams, and the I-V characteristics of the proposed structure in standard test conditions (STC). By connecting the top subcell and the bottom subcell with the intermediate tunnel junction of Gallium Arsenide (GaAs), and by utilizing In 0.47 Ga 0.15 Al 0.37 P for both the BSF and window layers, an efficiency of 25.65% was achieved. The results of the solar cell show an open- circuit voltage (V oc ) of 1.74 V, current density at short-circuit condition (J sc ) of 16.71 mA/cm² and a fill factor (FF) of 88.05%. All the considered layers were lattice-matched, guaranteeing compatibility with the current manufacturing innovations. This study illustrates that through key layer optimizations and progressed re-enactment methods, high- efficiency dual-junction solar cells can be created for their viable usage towards photovoltaic applications in the field of solar energy.
Keywords: Dual-junction solar cells, In 0.51 Ga 0.49 P composite material, TCAD modelling, Hybrid compound, Photovoltaic efficiency.
Indranil Maity, Arighna Bhattacharjee, Arijit Mondal. Performance Analysis of Dual Junction Solar Cell Devices utilizing Subcells of In 0.51 Ga 0.49 P and GaAs to Study Key Solar Cell Parameters via TCAD based Simulation. Journal of Polymer and Composites. 2024; ():-.
Indranil Maity, Arighna Bhattacharjee, Arijit Mondal. Performance Analysis of Dual Junction Solar Cell Devices utilizing Subcells of In 0.51 Ga 0.49 P and GaAs to Study Key Solar Cell Parameters via TCAD based Simulation. Journal of Polymer and Composites. 2024; ():-. Available from: https://journals.stmjournals.com/jopc/article=2024/view=0
References
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Journal of Polymer and Composites
| Volume | |
| Received | 12/08/2024 |
| Accepted | 24/10/2024 |
| Published | 10/12/2024 |