Electrical Measurements on La-modified Four-Layered Aurivillius Ceramics

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Year : 2024 | Volume : | : | Page : –
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Jyothirmai C,

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N.V. Prasad,

  1. Research Scholar, Department of Physics, Osmania University, Hyderabad, Telangana, India
  2. Associate Professor, Department of Physics, Osmania University, Hyderabad, Telangana, India

Abstract document.addEventListener(‘DOMContentLoaded’,function(){frmFrontForm.scrollToID(‘frm_container_abs_123643’);});Edit Abstract & Keyword

Bismuth layered structure ferroelectric (BLSF) of Aurivillius family is found to be attractive owing to its scientific and technological point of view. These materials have potential ferroelectric applications owing to the fact of its high Curie temperature, high temperature piezo-devise and ferroelectric random access memory (FRAM), applications. In addition, Bi-modified compounds have shown improved ferroelectric properties. However, the plausible reason for improving ferroelectric properties in Bi- modified is still unclear. The present manuscript explains the structural and electric properties of La- modified strontium bismuth zirconium titanate (SBTZO; SrLa x Bi 4-x Ti 3.85 Zr 0.15 O 15 , where x=0.15, 0.25, 0.50), prepared by solid-state reaction method. X-ray diffraction reveals the single-phase orthorhombic structure. SEM photographs revealed that the ceramics were composed with randomly oriented plate- like grains. The average grain size is found to increase with increasing La- composition. The Raman vibrational modes show the distribution of La into pseudo perovskite layers and Bi +3 , Sr +2 ions into Bi 2 O 3 layers. Asymmetric impedance spectroscopic plots suggest the non-Debye relaxation. The charge carriers are found to be controlled thermally activated process. Depressed semicircles have shown both Electrical Measurements on La-modified Four-Layered Aurivillius Ceramics Electrical Measurements (2014) 1-10 © STM Journals 2013. All Rights Reserved Page 2 grain and grain boundary contributions Ac-conductivity data was found to fit in to the universal (Jonscher’s) law. A decrease in the dielectric constant with increasing La-concentration is explained by means of oxygen vacancy concentration. The structural relaxation was attributed to the occupation of La into (Bi 2 O 3 ) +2 layers and the same is corroborated to the Raman spectroscopic data. The temperature dependent of dielectric study gives information about transition temperature. The broad dielectric peak suggests that the transition belongs to diffuse phase transition (DPT).

Keywords: Solid – state reaction method, XRD, Raman, impedance, AC conductivity

How to cite this article:
Jyothirmai C, N.V. Prasad. Electrical Measurements on La-modified Four-Layered Aurivillius Ceramics. Journal of Polymer and Composites. 2024; ():-.
How to cite this URL:
Jyothirmai C, N.V. Prasad. Electrical Measurements on La-modified Four-Layered Aurivillius Ceramics. Journal of Polymer and Composites. 2024; ():-. Available from: https://journals.stmjournals.com/jopc/article=2024/view=0


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References
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Ahead of Print Open Access Original Research
Volume
Received 19/04/2024
Accepted 09/05/2024
Published 06/12/2024
176