Open Access
Shib Shankar Singh
M. Madhav Kumar
Divya Kumar Garg
- Manager Gallium Arsenide Enabling Technology Centre (GAETEC) Hyderabad, Telangana India
- Scientist-F Advance Numerical Research and Analysis Group (ANURAG) Hyderabad, Telangana India
- Scientist-E Advance Numerical Research and Analysis Group (ANURAG) Hyderabad, Telangana India
Abstract
This paper present high frequency design approach and feasibility study of HBT (Hetero Junction Bipolar Transistor) based two-stage cascode amplifiers at W-band (90.0 GHz-100.0 GHz). The proposed amplifier has design using 130 nm SiGe based BiCMOS technology. This paper used low cost technology for designing of w-band amplifier and this is novelty of this paper. The schematic design and feasibility study has been carried out using Cadence software. The selection of active device, input and output matching and impacts of passive components have been analyzed for designing of amplifier at W-band frequency range. The schematic designed two-stage amplifier achieved +18.794±2.0 dB of small signal gain, better than – 15 dB of input return loss and better than-8.0dB of output return loss in simulation. This amplifier achieved +5.93 dBm of linear output power (+1 dB compression output power (P1 dB)) and +8.14 dBm of saturated output power in simulation at 95 GHz. This amplifier achieved less than +7% of %THD (Total Harmonic distortion). This schematic design amplifier includes the effect of all pads and bond wires of both stages of amplifier. The total current consumption of two-stage amplifier has only 30.0 mA with supply voltage of 3.3 volt.
Keywords: W-band, Cascode, BiCMOS, SiGe, HBT, Amplifier
References
1. Ekaterina Laskin, Pascal Chevalier, Member, Alain Chantre, Bernard Sautreuil, and Sorin P. Voinigescu. 165-GHz Transceiver in SiGe Technology. IEEE Journal of Solid-State Circuits, Vol. 43, No. 5, May 2008
2. Sung-Woon Moon, Yong-Hyun Baek, Jung-Hun Oh, Min Han, Jin Koo Rhee, Sam Dong Kim. New small-signal modelling method for W-band MHEMT-based Amplifier design. Proceedings of the 40th European Microwave Conference, pp 1146-1149
3. Bok-Hyung Lee, Dan An, Mun-Kyo Lee, Byeong-Ok Lim, Sam-Dong Kim, and Jin-Koo Rhee “Two Stage Broadband High-Gain W-Band Amplifier Using 0.1-um Metamorphic HEMT Technology. IEEE Electron Device Letters, Vol. 25, No. 12, December 2004
4. Yu-Sian Jiang, Jeng-Han Tsai, and Huei Wang. A W-Band Medium Power Amplifier in 90 nm CMOS. IEEE Microwave and Wireless Components Letters, vol. 18, No. 12, December 2008.
5. T. Suzuki, Y. Kawano, M. Sato, T. Hirose, and K. Joshin. 60 and 77GHz power amplifier in standard 90 nm CMOS. IEEE Int. Solid-State Circuits Conf. Tech. Dig., Feb. 2008, pp. 562–636.
6. B. Heydari, M. Bohsali, E. Adabi, and A. M. Niknejad. Low-power mm-wave components up to 104 GHz in 90 nm CMOS. IEEE Int. Solid-State Circuits Conf. Tech. Dig., Feb. 2007, pp.200–201.
7. E. Laskin, M. Khan pour, R. Aroca, K. W. Tang, P. Garcia, S.P. Voinigescu. 95 GHz receiver with fundamental frequency VCO and static frequency divider in 65 nm digital CMOS. in IEEE Int. Solid-State Circuits Conf. Tech. Dig., Feb. 2008, pp.180–181.
8. S.T. Nicolson, A. Tomkins, K.W. Tang, A. Cathelin, D. Belot, S.P. Voinigescu. A 1.2 V, 140 GHz receiver with on-die antenna in 65 nm CMOS. Proc. IEEE Rad. Freq. Integrated Circuits Symp., Jun.2008, pp. 239–242.
9. Y.-S. Jiang, Z.-M. Tsai, J.-H. Tsai, H.-T. Chen, H. Wang. A 86 to108 GHz amplifier in 90 nm CMOS. IEEE Microw. Wireless Compon. Lett., vol. 18, no. 2, pp. 124–126, Feb. 2008.
10. D. Nayak, L.-T. Hwang, I. Turlik. Simulation and design of lossy transmission lines in a thin-film multichip package. IEEE Trans. Compon., Packag., Manufact. Technol. A, vol. 13, no. 2, pp. 294– 302, Jun. 1990.
| Volume | |
| Received | March 10, 2022 |
| Accepted | March 22, 2022 |
| Published | January 25, 2023 |