This is an unedited manuscript accepted for publication and provided as an Article in Press for early access at the author’s request. The article will undergo copyediting, typesetting, and galley proof review before final publication. Please be aware that errors may be identified during production that could affect the content. All legal disclaimers of the journal apply.
Bibhu Prasad Ganthia,
- Assistant Professor, Electrical Engineering, Indira Gandhi Institute of Technology, Sarang, Dhenkanal, Odisha, India
Abstract
Semiconductor devices form the fundamental building blocks of modern electronic and integrated circuit systems, where their electrical behavior is governed by coupled carrier transport, electrostatic, and circuit-level phenomena. This work presents a unified mathematical framework for modeling semiconductor devices, junction dynamics, and their interaction with electronic circuits. The formulation integrates fundamental semiconductor relations, carrier concentration, drift–diffusion transport, Poisson’s equation, continuity equations, PN-junction behavior, diode characteristics, bipolar junction transistor operation, and MOSFET charge-controlled dynamics. The framework further establishes mathematical relationships between device-level parameters and circuit-level voltage, current, power, switching, and frequency responses. Nonlinear device characteristics are incorporated to represent practical operating conditions, including recombination, generation, parasitic effects, temperature dependence, and transient behavior. The proposed formulation provides a systematic basis for deriving analytical and numerical models applicable to rectifiers, amplifiers, switching circuits, CMOS structures, and integrated semiconductor systems. The resulting mathematical framework enables consistent prediction of device characteristics and circuit performance while providing a foundation for advanced semiconductor-device optimization and reliability analysis.
Keywords: Semiconductor devices; PN-junction dynamics; Carrier transport; Mathematical modeling; Circuit analysis; Nonlinear device characteristics
[This article belongs to Journal of Semiconductor Devices and Circuits ]
References
- Sze SM, Li Y, Ng KK. Physics of semiconductor devices. John wiley & sons; 2021 Mar 24.
- Neamen DA, Biswas D. Semiconductor physics and devices.
- Pierret RF. Semiconductor device fundamentals. Pearson Education India; 1996.
- Taur Y, Ning TH. Fundamentals of modern VLSI devices. Cambridge university press; 2021 Dec 2.
- Selberherr S. Analysis and simulation of semiconductor devices. Springer Science & Business Media; 1984.
- Schroder DK. Semiconductor material and device characterization. John Wiley & Sons; 2015 Jun 29.
- Streetman BG, Banerjee S. Solid state electronic devices. New Jersey: Prentice hall; 2000 Apr.
- Rakshit JK, Chattopadhyay T, Roy JN. Design of micro ring resonator based all optical adder/subtractor. Theoretical and Applied Physics. 2013;1:32-43.
- Sedra A, Smith KC, Carusone TC, Gaudet V. Microelectronic circuits 8th edition. Chapter. 2020;14:1235-6.
- Razavi B. Fundamentals of microelectronics. New York: Wiley; 2008.
Journal of Semiconductor Devices and Circuits
| Volume | 13 | |
| Issue | 02 | |
| Received | 09/09/2026 | |
| Accepted | 10/09/2026 | |
| Published | 12/09/2026 | |
| Publication Time | 3 Days |