Design and Analysis of Quantum Dot Solar Cell Using SCAPS-1D Software

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Year : 2026 | Volume : 17 | 01 | Page :
    By

    Santosh Kumar Gupta,

  • PRADEEP PAL,

  1. Assistant Professor, Department of M Tech, Goel Institute of Technology and Management, Lucknow, Uttar Pradesh, India
  2. Student, Department of M Tech, Goel Institute of Technology and Management, Lucknow, Uttar Pradesh, India

Abstract

Compared to conventional solar cells, quantum dot solar cells (QDSCs) have drawn a lot of attention due to their hybrid structure, low production cost, and greater power conversion efficiency. Nevertheless, carrier recombination in the quasi-neutral region (QNR) continues to limit their performance. The electron transport layer (ETL) and hole transport layer (HTL) are two of the layers that are most important in determining the overall efficiency of the device. The SCAPS-1D simulator was used in this work to conduct a numerical investigation with IGZO as the ETL, CdS as the buffer layer, Sb₂Se₃ as the absorber layer, and PbS as the HTL. After optimizing the device construction, doping concentrations were thoroughly examined. In this work, the SCAPS-1D simulation program was used to conduct a thorough numerical analysis of a QDSC structure. Lead sulfide (PbS) is the HTL, cadmium sulfide (CdS) is the buffer layer, antimony selenide (Sb₂Se₃) is the absorber layer, and indium gallium zinc oxide (IGZO) is the ETL in the suggested device architecture. Key photovoltaic characteristics, such as fill factor, open-circuit 2 voltage, short-circuit current density, and total power conversion efficiency, were thoroughly examined in relation to material selection and layer arrangement. In order to lower recombination losses and enhance charge carrier extraction, the effects of doping concentration modifications in the transport and absorber layers were carefully investigated after initial device optimization. The modified device reached a maximum power conversion efficiency of 35.67% thanks to the improved performance of IGZO.

Keywords: IGZO, quantum dot solar cell; features of SCAPS-1D, FF, Voc, Jsc, PCE, QE, and JV Characteristics.

How to cite this article:
Santosh Kumar Gupta, PRADEEP PAL. Design and Analysis of Quantum Dot Solar Cell Using SCAPS-1D Software. Journal of Alternate Energy Sources & Technologies. 2026; 17(01):-.
How to cite this URL:
Santosh Kumar Gupta, PRADEEP PAL. Design and Analysis of Quantum Dot Solar Cell Using SCAPS-1D Software. Journal of Alternate Energy Sources & Technologies. 2026; 17(01):-. Available from: https://journals.stmjournals.com/joaest/article=2026/view=236560


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Ahead of Print Subscription Original Research
Volume 17
01
Received 27/12/2025
Accepted 27/01/2026
Published 04/02/2026
Publication Time 39 Days
108

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