Journal of Microelectronics and Solid State Devices Cover

Journal of Microelectronics and Solid State Devices

ISSN: 2455-3336

Editors Overview

jomsd maintains an Editorial Board of practicing researchers from around the world, to ensure manuscripts are handled by editors who are experts in the field of study.

Open Access
Special Issue
Topic

A Review of the usage of Bipolar Transistors devices

Abstract Submission Deadline : November 30, 2024

Manuscript Submission Deadline : December 25, 2024

Special Issue Description

A bipolar junction transistor (BJT) is a type of transistor in which electrons and electron holes are used as charge carriers. A unipolar transistor, such as a field-effect transistor, on the other hand, uses only one type of charge carrier. A bipolar transistor uses a small current injected at one of its terminals to control a much larger current flowing between the terminals, allowing the device to amplify or switch. BJTs make use of two junctions between two types of semiconductors, n-type and p-type, which are regions in a single crystal of material. The junctions can be formed in a variety of ways, including changing the doping of the semiconductor material as it grows, depositing metal pellets to form alloy junctions and diffusion of n-type and p-type doping substances into the crystal. Junction transistors quickly surpassed the original point-contact transistor in predictability and performance. Diffused transistors, along with other components, are components of analog and digital integrated circuits. Hundreds of bipolar junction transistors can be manufactured at a low cost in a single circuit. Because of the wide variety of BJT types available, as well as its high transconductance and output resistance compared to MOSFETs, the BJT continues to excel in some applications, such as discrete circuit design. Bipolar transistor integrated circuits were the primary active devices in a generation of mainframe and minicomputers, but most computer systems now use field-effect transistor integrated circuits. Bipolar transistors are still used in signal amplification, switching, and digital circuits.

Keywords

Compound semiconductor, Equivalent circuit of electron devices, Current gain, Photocurrent gain and Transition metal dichalcogenides

Manuscript Submission information

Manuscripts should be submitted online via the manuscript Engine. Once you register on APID, click here to go to the submission form. Manuscripts can be submitted until the deadline.
All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the email address:[email protected] for announcement on this website.
Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a Double-blind peer-review process. A guide for authors and other relevant information for the submission of manuscripts is available on the Instructions for Authors page.

Participating journals:


2455-3336

Journal Name

Journal of Microelectronics and Solid State Devices

Abbrivation


jomsd

ISSN


2455-3336

Since

2014

APC

950  $