Comparative Study of Drain Current of Symmetric and Asymmetric DG-MOSFET with Simulation in Silvaco TCAD Software

Open Access

Year : 2021 | Volume : | Issue : 1 | Page : 1-13
By

    Abhishek Saha

  1. Vedatrayee Chakraborty

  1. Assistant Professor, Dream Institute of Technology, Kolkata, West Bengal, India
  2. Assistant Professor, B.P. Poddar Institute of Management and Technology, Kolkata, West Bengal, India

Abstract

One of the most attractive and promising devices for the nanoscale devices is the double gate MOSFET. The double gate MOSFET can control the Si channel very efficiently and it chooses a very small width of the Si channel. It controls the Si channel by applying gate contact to either side of the channel. The idea of controlling the S channel in such a way reduces the short channel effects and one can get a higher current as compared with a single gate MOSFET. In this paper, models of both symmetric and asymmetric DG-MOSFET are studied and performance is compared with the performance of single gate strained silicon MOSFET. The model of DG-MOSFET is simulated with Silvaco TCAD device simulator and different characteristic parameters are being studied.

Keywords: Asymmetric DG-MOSFET, device modeling, Silvaco TCAD, strained silicon, symmetric DG-MOSFET

[This article belongs to Journal of Semiconductor Devices and Circuits(josdc)]

How to cite this article: Abhishek Saha, Vedatrayee Chakraborty Comparative Study of Drain Current of Symmetric and Asymmetric DG-MOSFET with Simulation in Silvaco TCAD Software josdc 2021; 8:1-13
How to cite this URL: Abhishek Saha, Vedatrayee Chakraborty Comparative Study of Drain Current of Symmetric and Asymmetric DG-MOSFET with Simulation in Silvaco TCAD Software josdc 2021 {cited 2021 May 25};8:1-13. Available from: https://journals.stmjournals.com/josdc/article=2021/view=91291

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Regular Issue Open Access Article
Volume 8
Issue 1
Received April 19, 2021
Accepted May 10, 2021
Published May 25, 2021