Comparative Study of Symmetric and Asymmetric Oxide Double Gate Junction less FET

Open Access

Year : 2021 | Volume : | Issue : 2 | Page : 14-21
By

    Kunal Kumar

  1. Research Associate, National Cheng Kung University Tainan, , Taiwan

Abstract

we carry out the performance of symmetric oxide (HfO2+HfO2) and asymmetric oxide (SiO2+HfO2) n-type junction less field-effect transistor (JLFET) based on two- dimensional Poisson equation. This study is accomplished by simulating a symmetric and asymmetric double gate JLFET on Sentaurus, Technology Computer Aided Design (TCAD) simulator for Silicon (Si) material at room temperature and varying temperature in between 300-360 k. Based on device simulation we find that the asymmetric oxide shows preferable performance in terms of ON-state current (ION), subthreshold swing(SS), the ION/IOFF ratios (~107 ) and the equivalent oxide thickness (EOT) compared to symmetric devices and also asymmetric oxide technology enhances the performance and reduces the power consumptions.

Keywords: EOT, Symmetric, TCAD, (SS), (ION), (EOT).

[This article belongs to Journal of Semiconductor Devices and Circuits(josdc)]

How to cite this article: Kunal Kumar Comparative Study of Symmetric and Asymmetric Oxide Double Gate Junction less FET josdc 2021; 8:14-21
How to cite this URL: Kunal Kumar Comparative Study of Symmetric and Asymmetric Oxide Double Gate Junction less FET josdc 2021 {cited 2021 Oct 28};8:14-21. Available from: https://journals.stmjournals.com/josdc/article=2021/view=91268

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Regular Issue Open Access Article
Volume 8
Issue 2
Received October 9, 2021
Accepted October 21, 2021
Published October 28, 2021