Open Access
Shailendra Kumar Gaur
Qasim Murtaza
R.S. Mishra
1.1 Research Scholar, Department of Mechanical Engineering, Delhi Technological University, Bawana road, Delhi, India
1.2 Technical Officer C, Solid State Physics Laboratory, Timarpur, Delhi, India
2.1 Professor, Department of Mechanical Engineering, Delhi Technological University, Bawana road, Delhi, India
3.1 Professor, Department of Mechanical Engineering, Delhi Technological University, Bawana road, Delhi, India
Abstract
Indium thin film growth found numerous applications, such as cold welding of infrared detectors and readout-integrated circuits (ROIC) to form sensor chips. In film is grown on the Si substrate by thermal evaporation. The XRD results indicated the tetragonal bcc phase in the (101) preferential plane. Scanning electron microscopy (SEM) indicated an uniform, continuous film covering the whole surface. The EDS examination confirmed the pure In film. The atomic force microscopy (AFM) determined the average roughness and root mean square values at 38.5 nm and 47.9 nm, respectively. The ellipsometry measurement was done to check the surface condition and measure film thickness. The atomic force microscopy in contact mode determined the adhesion force 51.32 nN, thermodynamic adhesion-work according to the DMT and JKR theories 0.817 J/m2 (DMT), 1.089 J/m2, (JKR) and coefficient of friction 0.0049. The good adhesion of the film was tested via scotch tape.
Keywords: Thin film, indium, AFM, SEM, Adhesion force
[This article belongs to Special Issue under section in Journal of Polymer and Composites(jopc)]
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Journal of Polymer and Composites
| Volume | 11 |
| Special Issue | 12 |
| Received | October 30, 2023 |
| Accepted | November 20, 2023 |
| Published | January 15, 2024 |