Investigation of Electro-optical Characteristic and Structure Optimization of PMMA: Bepq2/BCP/Tpbi Blue Highly Efficient OLED Device

Year : 2023 | Volume : 11 | Issue : 05 | Page : 56-68

    Renu Sharma

  1. Ph.D Research Scholar, Department of ECE (Electronics and Communication Engineering), Malaviya National Institute of Technology Jaipur, Rajasthan, India


In this Investigation, the energy level structure of the Spiro-MeOTAD/PMMA: Bepq2/BCP/Tpbi/LiF OLED has been investigated to explain the method of electron-hole charge carrier pair recombination and the light generation. The Maxwell-Boltzmann statistics model was applied to optimize the structure to reduce the band gap between conductive layers. We found the simulated results J–V, J-Illumination flux, and Current Efficiency (CE) characteristics when we applied forward bias. Inconclusive results determined the threshold voltage is 3.37 V. In addition, we study the impact of the variation in thickness of the Exciton/Electron blocking layer (x=500Å, 600Å, 900Å, 1200Å) as BCP the behaviours of the electric and optical characteristics of the device and low CIEy may satisfy the needs of a broad range of blue OLED with the emission of exciton of 450 nm. The CIE coordinates remain stable at (0.150,0.150) and PMMA: Bepq2 polymer layer can cover the blue area entirely. Additionally, we analysed the internal device physics mathematical model in terms of current density, hole-electron mobility, effective carrier concentration and recombination. Our study aims to pave the way for future research

Keywords: Illumination flux, Current efficiency, HOMO-LUMO energy levels, PMMA: Bepq2, BCP

This article belongs to Special Issue Conference ICASEMCT-2023: International Conference on Advancements in Smart Electronics, Materials and Communication Technologies

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Conference Open Access Original Research
Volume 11
Issue 05
Received May 5, 2023
Accepted May 17, 2023
Published June 26, 2023