Journal of Microelectronics and Solid State Devices

ISSN: 2455-3336

Editors Overview

jomssd maintains an Editorial Board of practicing researchers from around the world, to ensure manuscripts are handled by editors who are experts in the field of study.

Focus and Scope

About the Journal

Journal of Microelectronics and Solid-State Devices [2455-3336(e)] is a peer-reviewed hybrid open-access journal launched in 2014 focused on the rapid publication of fundamental research papers on all areas of Solid state, Electronics, and Devices.

Focus and Scope

  • Solid-State Devices: Semiconductors, Transistors, integrated circuits, capacitors, resistors.

  • Light-Emitting diodes: semiconductor light source, photons, Infrared LEDs, photodiodes, electroluminescence, spectrum, RGB diodes, phosphor-converted white LEDs, organic light-emitting diode,

  • Liquid-Crystal Display: liquid crystals, polarizers, quantum dot displays, photolithography, birefringence, cold cathode fluorescent lamps, EL-WLED, elastomeric connectors, passive-matrix LCDs, Active-matrix liquid-crystal display, Thin-film-transistor liquid-crystal display.

  • Transistor amplifiers: amplifier, voltage, current, power, audio amplifier (AF), radio (RF) amplifiers, Gain,

  • Microelectronic circuits: silicon diodes and transistors, circuit analysis and design, MOSFET, bipolar junction transistor (BJT), Signals, frequency response amplifiers, Frequency Spectrum of Signals, Digital Logic Inverters, Circuit Simulation Using SPICE, Analog and Digital Signals, SPICE, Amplifiers, Circuit Models for Amplifiers.

  • Electronic band structure: Band theory, electrical resistivity, optical absorption, electrical conductivity.

  • Electrons: electric forces, electric charges, free electrons, atomic theory, quantum mechanics, atoms and molecules, conductivity, motion, and energy.

  • Energy bands: Valance Electrons, Valence Band, Conduction Electrons, Conduction Band, forbidden energy gap.

  • Metal-oxide-Semiconductor Capacitor: Flat-Band Condition and Flat-Band Voltage, Surface Accumulation, Surface Depletion, Threshold Condition, and Threshold Voltage, MOS C–V Characteristics, CCD Imager and CMOS Imager.

  • Nano MOSFETs: Silicon, Nanostructured materials, Nanoscale devices, Optical scattering, Particle scattering, Acoustic scattering, Mie scattering, Dielectric substrates, Quantization.

  • Device modeling: Diode modeling, Transistor models, Physics driven device modeling, circuit-level compact models, Technology CAD.

  • Bipolar Transistor Devices: bipolar transistors, the function of bipolar transistors, structures of bipolar transistors, characteristics of bipolar transistors, region of operation, amplification of signals, switching, digital circuits.

  • Micro/Nano Photonic Devices: nanophotonics, micro-optics, nanofabrication, nanostructures, materials synthesis, optical properties


  • Nanoscale complementary metal-oxide-semiconductor
  • Silicon-on-insulator technology
  • Semiconductor nanowire
  • Multi-gate MOSFET and CMOS devices
  • Micro and Nano Energy Harvesting Technologies
  • CMOS energy harvesting
  • Analog-to-Digital converter
  • Phase-locked loop
  • Charge Carriers
  • Microwave amplifier and RF receiver
  • Equivalent series resistance (ESR)
  • Capacitance (C)
  • Prony’s technique
  • Light-emitting diode (LED)
  • Electrolytic capacitors
  • Fault-tolerant LED driver
  • Bipolar Junction Transistor
  • Amplifier
  • Voltage Drop
  • Resistance