Editor’s Profile

Profile Image

Name: Prof. Aminul Islam

Editor : Journal of Semiconductor Devices and Circuits

Email:

Affiliation:

Birla Institute of Technology, Jharkhand, India 835215

Institutional Profile Link : https://www.bitmesra.ac.in/Display_My_Profile_00983KKj893L?id=H5IqkUd2pXwzcudL4RgQPg%253d%253d

Associate Professor in Electronics & telecommunication engineering at Birla Institute of Technology, Jharkhand, India
My expertise are VLSI Design/CAD for nanoscale silicon and non-silicon technologies [which center around the emerging nanoelectronics and spintronics devices like HEMT (high electron mobility transistor), SiC U-MOSFET, SiC V-MOSFET, VDMOSFET, FinFET, CNFET (Carbon Nanotube Field Effect Transistor), STT (spin-transfer torque)-based MTJ (magnetic tunnel junction) and memristor], SET (Single Electron Transistor), Multivalued Logic, SRAM (Static Random Access Memory), RRAM (resistive random access memory), PCRAM (Phase Change Random Access Memory), STT-MTJ based MRAM (magnetic random access memory), power- and variability-aware design, RF device, and circuit modeling, design of ultralow-power nanoscale circuits for portable/wearable/energy-harvesting applications.


Recent Publications

  1. Singh PK, Raj R, Kumar V, Pandey M, Prasad S, Islam A. Comparative analysis and robustness study of logic styles. Microsystem Technologies. 2022 Dec;28(12):2807-20.Available at- https://link.springer.com/article/10.1007/s00542-022-05378-6
  2. Prasad S, Islam A. Characterization of AlInN/GaN based HEMT for Radio Frequency Applications. Micro and Nanosystems. 2023 Mar 1;15(1):55-64.Available at- https://www.ingentaconnect.com/content/ben/mns/2023/00000015/00000001/art00010
  3. Prasad S, Islam A. Y-shaped double-gate high electron mobility transistor for radio frequency applications. International Journal of Nanoparticles. 2022;14(2-4):181-201.Available at- https://www.inderscienceonline.com/doi/abs/10.1504/IJNP.2022.126356?journalCode=ijnp
  4. Yekula RT, Pandey M, Islam A. A highly reliable radiation tolerant 13T SRAM cell for deep space applications. Microelectronics Reliability. 2022 Jun 1;133:114527.Available at- https://www.sciencedirect.com/science/article/abs/pii/S0026271422000518