Editor’s Profile

Name: Dr. Gagan Mohan Khanduri

Editor : Journal of Semiconductor Devices and Circuits


Affiliation: Aryabhatta College of Engineering and Research Centre (RTU), Rajasthan, India 201309

Institutional Profile Link : http://eprint.iitd.ac.in/bitstream/handle/2074/8829/TH-3343.pdf?sequence=1&isAllowed=y

Associate Professor in electronics & telecommunication engineering at Aryabhatta College of Engineering and Research Centre (RTU), Rajasthan, India
My expertise are Microelectronics and Semiconductor Device Modelling

Recent Publications

  1. Khanduri G, Panwar B. An iteration approach for base doping optimization to minimize the base transit time in triangular-Ge-profile SiGe HBTs. Solid-state electronics. 2007 Jun 1;51(6):961-4.Available at- https://www.sciencedirect.com/science/article/abs/pii/S0038110107001323
  2. Khanduri G, Panwar B. A novel approach for justification of box-triangular germanium profile in SiGe HBTs. Journal of Semiconductors. 2015 Feb 1;36(2):024002.Available at- https://iopscience.iop.org/article/10.1088/1674-4926/36/2/024002/meta
  3. Khanduri G, Brishbhan P. Optimization of base profile in bipolar transistors considering retarding field in base, sheet resistance and minority carrier velocity saturation. In2010 Fourth UKSim European Symposium on Computer Modeling and Simulation 2010 Nov 17 (pp. 535-540). IEEE.Available at- https://ieeexplore.ieee.org/abstract/document/5703741
  4. Khanduri G, Panwar B. Current gain modeling of SiGe DHBTs in SPICE including retarding potential barrier effect. InProceedings 2007 IEEE SoutheastCon 2007 Mar 22 (pp. 569-573). IEEE.Available at- https://ieeexplore.ieee.org/abstract/document/4147497