Editor’s Profile

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Name: Dr. D. Nirmal

Editor : Journal of Semiconductor Devices and Circuits


Affiliation: Karunya University, Tamil Nadu, India 641114

Institutional Profile Link : https://karunya.edu/sites/default/files/img/site/ece/Dr_Nirmal.pdf

Professor & Head of the Department in Electronics & telecommunication engineering at Karunya University, Tamil Nadu, India
My expertise are Nanoelectronics,1D / 2D Materials, Graphene, Carbon nanotubes, GaN Technology, Nanoscale device design and modelling, Device and circuit simulation- GSI, Sensors, VLSI Technology, Microwave Engineering, Solid State Devices, Electron Devices and Digital Electronics.

Recent Publications

  1. Hamza KH, Nirmal D. A review of GaN HEMT broadband power amplifiers. AEU-International Journal of Electronics and Communications. 2020 Mar 1;116:153040.Available at- https://www.sciencedirect.com/science/article/abs/pii/S1434841119321892
  2. Ajayan J, Nirmal D, Tayal S, Bhattacharya S, Arivazhagan L, Fletcher AA, Murugapandiyan P, Ajitha D. Nanosheet field effect transistors-A next generation device to keep Moore’s law alive: An intensive study. Microelectronics Journal. 2021 Aug 1;114:105141.Available at- https://www.sciencedirect.com/science/article/abs/pii/S002626922100152X
  3. Jarndal A, Arivazhagan L, Nirmal D. On the performance of GaN‐on‐silicon, silicon‐carbide, and diamond substrates. International Journal of RF and Microwave Computer‐Aided Engineering. 2020 Jun;30(6):e22196.Available at- https://onlinelibrary.wiley.com/doi/abs/10.1002/mmce.22196
  4. Fletcher AA, Nirmal D, Ajayan J, Arivazhagan L. Analysis of AlGaN/GaN HEMT using discrete field plate technique for high power and high frequency applications. AEU-International Journal of Electronics and Communications. 2019 Feb 1;99:325-30.Available at- https://www.sciencedirect.com/science/article/abs/pii/S1434841118321435