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nOne of the most attractive and promising devices for the nanoscale devices is the double gate MOSFET. The double gate MOSFET can control the Si channel very efficiently and it chooses a very small width of the Si channel. It controls the Si channel by applying gate contact to either side of the channel. The idea of controlling the S channel in such a way reduces the short channel effects and one can get a higher current as compared with a single gate MOSFET. In this paper, models of both symmetric and asymmetric DG-MOSFET are studied and performance is compared with the performance of single gate strained silicon MOSFET. The model of DG-MOSFET is simulated with Silvaco TCAD device simulator and different characteristic parameters are being studied.n

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Journal of Semiconductor Devices and Circuits

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[if 344 not_equal=””]ISSN: 2455-3379[/if 344]

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nwe carry out the performance of symmetric oxide (HfO2+HfO2) and asymmetric oxide (SiO2+HfO2) n-type junction less field-effect transistor (JLFET) based on two- dimensional Poisson equation. This study is accomplished by simulating a symmetric and asymmetric double gate JLFET on Sentaurus, Technology Computer Aided Design (TCAD) simulator for Silicon (Si) material at room temperature and varying temperature in between 300-360 k. Based on device simulation we find that the asymmetric oxide shows preferable performance in terms of ON-state current (ION), subthreshold swing(SS), the ION/IOFF ratios (~107 ) and the equivalent oxide thickness (EOT) compared to symmetric devices and also asymmetric oxide technology enhances the performance and reduces the power consumptions.n

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3. K. Kumar, Y. Hsieh, J. Liao, K. Kao and Y. Wang, “Significance of Multivalley and Nonparabolic Band Structure for GeSn TFET Simulation,” in IEEE Transactions on Electron Devices, vol. 65, no. 10, pp. 4709-4715, Oct. 2018, doi: 10.1109/TED.2018.2864544.
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