Total Articles : 2
Performance and Analysis of 6T, 8T & 10T SRAM Cell in 28nm Technology
Abstract: Technology scaling into deep sub-micron regimes has significantly increased the design challenges of Static Random Access Memory (SRAM), particularly at the 28 nm technology node. As transistor dimensions shrink, SRAM cells become more vulnerable to …
[This section belongs to Journal of VLSI Design Tools and Technology ]
Thermally Adaptive Bio-Inspired VLSI Interconnect Model for Next-Generation Embedded Systems
Abstract: The increasing complexity of next-generation embedded systems has intensified the challenges associated with power dissipation, thermal instability, signal integrity, and interconnect reliability in Very Large- Scale Integration (VLSI) architectures. …
[This section belongs to Journal of VLSI Design Tools and Technology ]