Journal Of Semiconductor Devices And Circuits

About the Journal

Journal of Semiconductor Devices and Circuits

Journal of Semiconductor Devices and Circuits [2231-0401(e)] is a peer-reviewed hybrid open-access journal launched in 2014 focused on the rapid publication of fundamental research papers on all areas of Semiconductor Devices and Circuits.

Focus & Scope

Semiconductor Device Physics: Carrier transport, drift and diffusion, generation and recombination, mobility, scattering, tunneling, band structure, density of states, quantum confinement, and charge-transport phenomena.
Semiconductor Materials: Silicon, germanium, III–V semiconductors, II–VI semiconductors, compound semiconductors, oxide semiconductors, organic semiconductors, wide-bandgap materials, 2D materials, and emerging electronic materials.
Conductors, Insulators and Dielectrics: Electrical conductivity, resistivity, superconductivity, dielectric materials, high-k dielectrics, insulating films, breakdown mechanisms, leakage, dielectric reliability, and conductive materials for semiconductor systems.
Energy Bands and Carrier Transport: Valence and conduction bands, forbidden energy gap, Fermi level, carrier concentration, effective mass, majority and minority carriers, recombination, and transport mechanisms.
Semiconductor Doping and Junction Engineering: Intrinsic and extrinsic semiconductors, donor and acceptor doping, ion implantation, diffusion, modulation doping, delta doping, heterojunction engineering, and junction formation.
Diodes and Junction Devices: PN junctions, Schottky diodes, Zener diodes, PIN diodes, tunnel diodes, avalanche devices, photodiodes, varactors, and high-speed junction devices.
MOS Capacitors and MOS Structures: Accumulation, depletion and inversion, C-V characteristics, oxide capacitance, interface traps, flat-band voltage, threshold behavior, high-k gate stacks, and MOS reliability.
MOSFET and CMOS Devices: Long- and short-channel MOSFETs, CMOS devices, threshold voltage, subthreshold conduction, velocity saturation, leakage, scaling, device optimization, and CMOS technology.
Advanced Transistor Technologies: FinFETs, gate-all-around transistors, nanosheet FETs, tunnel FETs, nanowire FETs, HEMTs, MESFETs, HBTs, junctionless transistors, and beyond-CMOS devices.
Analog and Digital Semiconductor Circuits: Transistor amplifiers, logic circuits, current mirrors, oscillators, switches, mixed-signal circuits, interface circuits, and semiconductor-based analog and digital systems.
Integrated Circuits and VLSI Devices: CMOS ICs, ASICs, system-on-chip devices, low-power VLSI, analog ICs, mixed-signal ICs, digital integrated circuits, and device-circuit co-design.
Power Semiconductor Devices: Power MOSFETs, IGBTs, thyristors, Schottky power diodes, SiC and GaN devices, high-voltage transistors, switching losses, breakdown phenomena, and thermal performance.
Wide-Bandgap and Ultra-Wide-Bandgap Semiconductors: Silicon carbide, gallium nitride, gallium oxide, diamond electronics, high-temperature devices, high-voltage devices, and high-frequency semiconductor technologies.
Optoelectronic Devices: LEDs, laser diodes, photodiodes, phototransistors, photoconductors, optical switches, photovoltaic devices, image sensors, and electro-optic semiconductor systems.
Optical Sensors and Photodetectors: Position sensors, infrared detectors, photoelectric sensors, photovoltaic sensors, imaging arrays, optical sensing materials, and integrated photodetector circuits.
Photovoltaic and Solar Semiconductor Devices: Solar cells, thin-film photovoltaics, tandem cells, perovskite devices, heterojunction solar cells, carrier collection, device efficiency, degradation, and photovoltaic integration.
Semiconductor Sensors: Temperature, pressure, gas, chemical, biosensors, magnetic sensors, optical sensors, MEMS sensors, integrated sensing platforms, and smart semiconductor sensors.
Nanoelectronics: Nanowire devices, quantum dots, nanoscale transistors, graphene electronics, carbon nanotube devices, 2D semiconductor devices, and quantum-confined electronic systems.
Semiconductor Fabrication and Processing: Oxidation, lithography, etching, plasma etching, deposition, epitaxy, diffusion, ion implantation, metallization, passivation, wafer processing, and process integration.
Thin Films and Surface Engineering: Semiconductor thin films, dielectric films, conductive films, interface engineering, surface passivation, defect control, contact engineering, and thin-film characterization.
Device Modelling and Simulation: TCAD, compact modelling, SPICE models, drift-diffusion simulation, Monte Carlo methods, quantum transport modelling, numerical simulation, and device-circuit simulation.
Semiconductor Characterization: I-V and C-V analysis, Hall measurements, mobility extraction, optical spectroscopy, Raman spectroscopy, electron microscopy, defect characterization, and electrical reliability measurements.
Charge Carrier Dynamics: Carrier generation, recombination, trapping, minority-carrier lifetime, mobility, diffusion length, transient transport, and carrier-density effects.
Thermoelectric Semiconductor Devices: Thermoelectric materials, Seebeck effect, Peltier devices, thermoelectric generators, coolers, power factor, figure of merit, and energy-conversion applications.
Memory and Storage Devices: Flash memory, EEPROM, DRAM, SRAM, RRAM, MRAM, phase-change memory, ferroelectric memory, memristive devices, and emerging nonvolatile memories.
RF and Microwave Semiconductor Devices: RF CMOS, GaN HEMTs, microwave transistors, high-frequency diodes, RF amplifiers, oscillators, mixers, and semiconductor devices for wireless systems.
MEMS and Microsystems: MEMS devices, microsensors, microactuators, CMOS-MEMS integration, micromachining, miniaturized semiconductor systems, and sensor-interface integration.
Reliability and Failure Mechanisms: Bias-temperature instability, hot-carrier degradation, oxide breakdown, electromigration, thermal effects, radiation effects, device aging, lifetime prediction, and failure analysis.
Defects and Interface States: Crystal defects, vacancies, dislocations, traps, interface states, grain boundaries, defect passivation, contact defects, and their impact on device performance.
Semiconductor Device Packaging and Integration: Chip packaging, thermal management, 2.5D/3D integration, chiplets, through-silicon vias, heterogeneous integration, interconnect reliability, and advanced packaging.
Neuromorphic and In-Memory Semiconductor Devices: Memristors, synaptic transistors, resistive switching, in-memory computing, neuromorphic devices, spiking hardware, and brain-inspired semiconductor systems.
AI Hardware and Semiconductor Accelerators: AI accelerators, neural processing units, edge-AI devices, semiconductor architectures for machine learning, low-power compute devices, and device-level AI hardware.
Emerging Semiconductor Technologies: Quantum devices, spintronics, flexible electronics, printed semiconductors, transparent electronics, bioelectronics, photonic-semiconductor integration, and next-generation semiconductor platforms.

Keywords

Semiconductor Devices, Semiconductor Materials, MOSFETs, CMOS Technology, Nanoelectronics, Integrated Circuits, Optoelectronic Devices, Semiconductor Fabrication, Device Modelling, Wide-Bandgap Semiconductors