Design and Implementation of Low Power and Area Efficient Sub Threshold Level Shifter Using 16 nm CMOS Technology

Year : 2023 | Volume :01 | Issue : 01 | Page : 16-24
By

J. Spandana

L. Jagadeesh Naik

  1. Student Department of Electronics & Communication Engineering, Holy Trinity Educational Society Telangana India
  2. Associate professor Department of Electronics & Communication Engineering, Holy Trinity Educational Society, Holy Mary Institute of Technology and Science, Kondapur Telangana India

Abstract

An efficient method of modifying subthreshold voltages is proposed here. As an alternative to static power dissipation, the suggested design allows for charging of internal nodes through VDDH. The force of the pull-down mechanism may be increased by connecting a second auxiliary circuit. The transition energy for input frequencies between 1 and 5 MHz is 84 fJ, the propagation delay is 46 ns, the dynamic power dissipation is 0.3 mW, and the static power dissipation is 23 mW, according to post-layout simulations of level shifters in 16 nm CMOS technology. Silicon has a precise area of 60.6902 microsquare meters, which is an intriguing statistic.

Keywords: CPU, power dissipation, auxiliary circuit, CMOS, logic circuits

[This article belongs to International Journal of VLSI Circuit Design & Technology(ijvcdt)]

How to cite this article: J. Spandana, L. Jagadeesh Naik. Design and Implementation of Low Power and Area Efficient Sub Threshold Level Shifter Using 16 nm CMOS Technology. International Journal of VLSI Circuit Design & Technology. 2023; 01(01):16-24.
How to cite this URL: J. Spandana, L. Jagadeesh Naik. Design and Implementation of Low Power and Area Efficient Sub Threshold Level Shifter Using 16 nm CMOS Technology. International Journal of VLSI Circuit Design & Technology. 2023; 01(01):16-24. Available from: https://journals.stmjournals.com/ijvcdt/article=2023/view=117544

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Regular Issue Subscription Review Article
Volume 01
Issue 01
Received July 4, 2023
Accepted August 14, 2023
Published September 4, 2023
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